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Malte Backhaus
(CERN)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Marlon B. Barbero
(CPPM - CNRS/IN2P3 / Aix-Marseille Université (FR))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
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Marta Baselga Bacardit
(Instituto de Fisica Corpuscular (ES))
- Co-author in Radiation hardness of Low Gain Amplification Detectors (LGAD)
- Co-author in Segmented LGAD
-
Richard Bates
(University of Glasgow (GB))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Victor Hugo Benitez Casma (Instituto de Fisica Corpuscular (ES))
-
Christopher Betancourt
(Albert-Ludwigs-Universitaet Freiburg (DE))
- Co-author in A Long Term Study of Charge Multiplication
- Co-author in Status of Silicon Strip Sensor Measurements at Liverpool
- Ashutosh Bhardwaj (University of Delhi (IN))
-
Andrew Blue
(University of Glasgow)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Marco Bomben (Centre National de la Recherche Scientifique (FR))
-
Frederic Bompard
(Centre National de la Recherche Scientifique (FR))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Patrick Breugnon
(Centre National de la Recherche Scientifique (FR))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
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Craig Buttar
(University of Glasgow (GB))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Mar Capeans Garrido
(CERN)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Nicolo Cartiglia
(Universita e INFN (IT))
- Author in Timing properties of UFSD
- Co-author in Segmented LGAD
- Gianluigi Casse (University of Liverpool (GB))
- Emanuele Cavallaro (IFAE Barcelona (ES))
-
Francesca Cenna
(Universita e INFN (IT))
- Co-author in Timing properties of UFSD
- Matteo Centis Vignali (Hamburg University (DE))
- Vladimir Cindro (Jozef Stefan Institute (SI))
- Paul Dervan (University of Liverpool (GB))
- nicoleta dinu
- Nicoleta Dinu (Universite de Paris-Sud 11 (FR))
- Doris Eckstein (DESY)
- Thomas Eichhorn (DESY)
- Joachim Erfle (Hamburg University (DE))
- Vitaliy Fadeyev (University of California,Santa Cruz (US))
-
Simon Feigl
(CERN)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Marcos Fernandez Garcia (Universidad de Cantabria (ES))
- Pablo Fernández-Martínez (IMB-CNM-CSIC)
-
Didier Ferrere
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Dean Charles Forshaw (University of Liverpool (GB))
-
Patrick Freeman
(UC Santa Cruz)
- Co-author in Segmented LGAD
- Eckhart Fretwurst (Institute for Experimental Physics, Hamburg University, Hamburg, Germany)
-
Zac Galloway
(UC Santa Cruz)
- Co-author in Segmented LGAD
- Christian Gallrapp (CERN)
-
Mauricio Garcia-Sciveres
(Lawrence Berkeley National Lab. (US))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Erika Garutti
(DESY)
- Co-author in Beam test of thin epitaxial silicon strip sensors for the CMS phase II pixel upgrade
- Co-author in Impact of Low-Dose Electron Irradiation on the Charge Collection of n+p Silicon Strip Sensors
- Co-author in Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon
-
Matthias Alexander George
(Georg-August-Universitaet Goettingen (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Blerina Gkotse (N)
- Vagelis Gkougkousis (Universite de Paris-Sud 11 (FR))
- Maurice Glaser (CERN)
-
Sergio Gonzalez Sevilla
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Virginia Greco (IMB-CNM-CSIC)
- Ingrid-Maria Gregor (DESY)
- Alex Grillo (University of California,Santa Cruz (US))
- Sebastian Grinstein (IFAE/ICREA Barcelona)
-
Joern Grosse-Knetter
(Georg-August-Universitaet Goettingen (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Jasu Haerkoenen (Helsinki Institute of Physics (FI))
- Marc Manuel Hauser (Albert-Ludwigs-Universitaet Freiburg (DE))
-
Tomasz Hemperek
(Universitaet Bonn (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Salvador Hidalgo Villena (Universidad de Valencia (ES))
-
Fabian Huegging
(University of Bonn)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Daniel Hynds
(University of Glasgow)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Giuseppe Iacobucci
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Geetika Jain (University of Delhi)
-
Karl Jakobs
(Albert-Ludwigs-Universitaet Freiburg (DE))
- Co-author in A Long Term Study of Charge Multiplication
- Co-author in Status of Silicon Strip Sensor Measurements at Liverpool
- Alexandra Junkes (Hamburg University (DE))
- Robert Klanner (Hamburg University (DE))
- Peter Kodys (Charles University)
- Gregor Kramberger (Jozef Stefan Institute (SI))
-
Christian Kreidl
(Heidelberg University)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Hans Krueger
(University of Bonn)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
- Co-author in A Long Term Study of Charge Multiplication
- Co-author in Status of Silicon Strip Sensor Measurements at Liverpool
- Carlos Lacasta Llacer (IFIC-Valencia)
- Joern Lange (IFAE Barcelona)
-
Alessandro La Rosa
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Stanislav Lastovskii (Scientific-Practical Materials Research Centre of NAS of Belarus)
- Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
-
Zhijun Liang
(University of California,Santa Cruz (US))
- Co-author in Segmented LGAD
- Pedro Miguel Lima Da Costa E Silva (CERN)
- Gunnar Lindstroem (University of Hamburg)
-
Kristin Lohwasser
(Deutsches Elektronen-Synchrotron (DE))
- Co-author in A Long Term Study of Charge Multiplication
- Ivan Lopez Paz (Universitat Autònoma de Barcelona (ES))
- Abdenour Lounis (Universite de Paris-Sud 11 (FR))
- Manuel Lozano Fantoba (Instituto de Fisica Corpuscular (ES))
- Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- Teppo Maeenpaeae (Helsinki Institute of Physics (FI))
- Leonid Makarenko (B)
- Igor Mandic (Jozef Stefan Institute (SI))
- Marko Mikuz (Jozef Stefan Institute (SI))
-
Antonio Miucci
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Michael Moll
(CERN)
- Author in Status of the new irradiation facilities in the CERN EAST HALL
- Co-author in Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes
- Co-author in Simulations of Hadron Irradiation Effects for Si Sensors Using Effective Bulk Damage Model
- Co-author in Status of Silicon Strip Sensor Measurements at Liverpool
- Co-author in TCT, eTCT and I-DLTS measurement setups at the CERN SSD Lab
- Christian Möller (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
-
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
- Co-author in A Long Term Study of Charge Multiplication
- Co-author in Status of Silicon Strip Sensor Measurements at Liverpool
-
Daniel Muenstermann
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Clara Nellist (LAL-Orsay (FR))
-
Marzio Nessi
(CERN)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Hannes Neugebauer (Hamburg University (DE))
- Richard Nisius (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- S.V. Nistor (NIMP - Magurele (RO))
- Leona Nistor (NIMP Bucharest-Magurele (RO))
-
Theresa Obermann
(Universitaet Bonn (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))
- . On behalf of the LHCb VELO group (.)
-
Patrick Pangaud
(Centre National de la Recherche Scientifique (FR))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Colin Parker
(UC Santa Cruz)
- Co-author in Segmented LGAD
- Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))
- Botho Albrecht Paschen (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- Giulio Pellegrini (CNM-IMB-CSIC)
- Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
- Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
-
Ivan Peric
(Ruprecht-Karls-Universitaet Heidelberg (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Heinz Pernegger
(CERN)
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
- Co-author in Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes
- Co-author in ESR investigation of paramagnetic point defects in O doped crystalline Si-FZ irradiated with 27 MeV electrons
- Co-author in High resolution transmission electron microscopy (HRTEM) investigations of silicon irradiated with high energy electrons
- Co-author in Investigation of point and extended defects in electron irradiated silicon – dependence on the particle energy
- Thomas Poehlsen (University of Hamburg)
-
Arnulf Quadt
(Georg-August-Universitaet Goettingen (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Roxana Radu (National Institute of Materials Physics NIMP, Bucharest, Romania)
- Kirti Ranjan (University of Delhi (IN))
- Ranjeet Ranjeet (University of Delhi (IN))
-
Fabio Ravera
(Universita e INFN (IT))
- Co-author in Timing properties of UFSD
- Federico Ravotti (CERN)
-
Julia Katharina Rieger
(Georg-August-Universitaet Goettingen (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Branislav Ristic
(Universite de Geneve (CH))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Ralf Röder (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
-
Alexandre Rozanov
(CPPM, Aix-Marseille Université, CNRS/IN2P3 (FR))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Igor Rubinskiy (DESY)
-
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
- Author in Segmented LGAD
- Co-author in Evaluation of the Low Resistance Strip Sensors Fabricated at CNM
- Co-author in Investigation of radiation hardness of alumina layer for slim edge devices
- Co-author in Radiation hardness of Low Gain Amplification Detectors (LGAD)
- Co-author in Timing properties of UFSD
- Christian Scharf (Hamburg University (DE))
- Joern Schwandt (Uni Hamburg)
-
Abraham Seiden
(University of California,Santa Cruz (US))
- Co-author in Segmented LGAD
- Co-author in Timing properties of UFSD
-
Ned Spencer
(University of California,Santa Cruz (US))
- Co-author in Timing properties of UFSD
- Georg Steinbrueck (Hamburg University (DE))
- Kerstin Tackmann (Deutsches Elektronen-Synchrotron (DE))
- Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
- Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))
- Juozas Vaitkus (Vilnius University)
-
Jens Weingarten
(Georg-August-Universitaet Goettingen (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
-
Norbert Wermes
(Universitaet Bonn (DE))
- Co-author in Edge-TCT studies of non-irradiated HVCMOS sensors
- Tobias Wittig (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
- Sven Wonsak (University of Liverpool (GB))
- Eda Yildirim (Deutsches Elektronen-Synchrotron (DE))
- Ernestas Zasinas (Vilnius University)
-
Andriy Zatserklyaniy
(UC Santa Cruz)
- Co-author in Segmented LGAD
- Marko Zavrtanik (Jozef Stefan Institute (SI))