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08:15
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Welcome Coffee & Registration
(until 09:00)
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09:00
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Session 1 - Defect and Material Characterization
-Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
(until 13:00)
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09:00
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Workshop opening
- Dr
Ionut Enculescu
(Director of NIMP, Bucharest)
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09:05
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Workshop opening
- Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
Michael Moll
(CERN)
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09:10
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Investigation of point and extended defects in electron irradiated silicon – dependence on the particle energy
-
Roxana Radu
(National Institute of Materials Physics NIMP, Bucharest, Romania)
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09:30
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Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes
-
Leonid Makarenko
(B)
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09:50
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A<sub>Si</sub>-Si<sub>i</sub> defect as possible origin of electronically activated degradation of boron and indium doped silicon
- Dr
Kevin Lauer
(CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
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10:10
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Electron Induced Damage in Silicon - TRIM and TCAS Simulations
- Prof.
Gunnar Lindstroem
(University of Hamburg)
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10:30
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--- Coffee ---
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11:00
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Modelling Vacancy-Interstitial Clusters and their effect on on Carrier Transport in Silicon
- Dr
Ernestas Zasinas
(Vilnius University)
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11:20
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ESR investigation of paramagnetic point defects in O doped crystalline Si-FZ irradiated with 27 MeV electrons
-
S.V. Nistor
(NIMP - Magurele (RO))
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11:40
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High resolution transmission electron microscopy (HRTEM) investigations of silicon irradiated with high energy electrons
-
Leona Nistor
(NIMP Bucharest-Magurele (RO))
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12:00
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Discussion: Defect and Material Characterization
- Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
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