24th RD50 Workshop (Bucharest)

Speaker List

• Marco Bomben (Centre National de la Recherche Scientifique (FR))
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    Electric field measurement in irradiated silicon sensors by means of simulations and beam tests [Skype presentation]

• Nicolo Cartiglia (Universita e INFN (IT))
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    Timing properties of UFSD

• Matteo Centis Vignali (Hamburg University (DE))
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    Beam test of thin epitaxial silicon strip sensors for the CMS phase II pixel upgrade

• Vladimir Cindro (Jozef Stefan Institute (SI))
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    CCE and Edge_TCT measurements with ATLAS 07 and ATLAS 12 detectors

• Ionut Enculescu (Director of NIMP, Bucharest)
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    Workshop opening

• Christian Gallrapp (CERN)
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    TCT, eTCT and I-DLTS measurement setups at the CERN SSD Lab

• Vagelis Gkougkousis (Universite de Paris-Sud 11 (FR))
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    SiMS measurements & Simulation, Varied bias rail geometry structures characterization and TCAD simulation

• Virginia Greco (IMB-CNM-CSIC)
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    Discussion on LGAD

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    Preliminary results on proton irradiated LGAD PAD detectors

• Gregor Kramberger (Jozef Stefan Institute (SI))
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    Edge-TCT studies of non-irradiated HVCMOS sensors

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    Radiation hardness of Low Gain Amplification Detectors (LGAD)

• Joern Lange (IFAE Barcelona)
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    Slim-edge and non-uniformly irradiated 3D silicon pixel detectors for forward physics experiments

• Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
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    A_Si-Si_i defect as possible origin of electronically activated degradation of boron and indium doped silicon

• Gunnar Lindstroem (University of Hamburg)
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    Electron Induced Damage in Silicon - TRIM and TCAS Simulations

• Leonid Makarenko (B)
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    Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes

• Michael Moll (CERN)
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    Workshop opening

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    Status of the new irradiation facilities in the CERN EAST HALL

• Clara Nellist (LAL-Orsay (FR))
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    Characterisation and testing of ATLAS FE-I4 devices for the HL-LHC

• S.V. Nistor (NIMP - Magurele (RO))
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    ESR investigation of paramagnetic point defects in O doped crystalline Si-FZ irradiated with 27 MeV electrons

• Leona Nistor (NIMP Bucharest-Magurele (RO))
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    High resolution transmission electron microscopy (HRTEM) investigations of silicon irradiated with high energy electrons

• Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))
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    Studies of radiation damage in the LHCb Vertex Locator after Run I.

• . On behalf of the LHCb VELO group (.)
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    Studies of radiation damage in the LHCb Vertex Locator after Run I.

• Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))
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    A Long Term Study of Charge Multiplication

• Giulio Pellegrini (CNM-IMB-CSIC)
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    Fabrication of 200um thick p and n- type pad detectors with enhanced multi-plication effect

• Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
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    Investigation of radiation hardness of alumina layer for slim edge devices

• Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
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    A method to model the accumulation of oxide charge with fluence in an irradiated MSSD

• Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
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    Discussion: Defect and Material Characterization

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    Workshop opening

• Thomas Poehlsen (University of Hamburg)
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    Impact of Low-Dose Electron Irradiation on the Charge Collection of n+p Silicon Strip Sensors

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    Trapping in p-on-n silicon sensors at fluences relevant for the HL-LHC

• Roxana Radu (National Institute of Materials Physics NIMP, Bucharest, Romania)
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    Investigation of point and extended defects in electron irradiated silicon – dependence on the particle energy

• Ranjeet Ranjeet (University of Delhi (IN))
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    Simulations of Hadron Irradiation Effects for Si Sensors Using Effective Bulk Damage Model

• Igor Rubinskiy (DESY)
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    Electric field measurement in irradiated silicon sensors by means of simulations and beam tests [Skype presentation]

• Hartmut Sadrozinski (SCIPP, UC santa Cruz)
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    Segmented LGAD

• Christian Scharf (Hamburg University (DE))
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    Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon

• Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
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    Heavily irradiated thin n-in-p planar pixel sensors and status of the new common RD50 productions

• Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))
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    Evaluation of the Low Resistance Strip Sensors Fabricated at CNM

• Sven Wonsak (University of Liverpool (GB))
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    Status of Silicon Strip Sensor Measurements at Liverpool

• Eda Yildirim (Deutsches Elektronen-Synchrotron (DE))
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    Lorentz angle measurement on ATLAS silicon microstrip sensors

• Ernestas Zasinas (Vilnius University)
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    Modelling Vacancy-Interstitial Clusters and their effect on on Carrier Transport in Silicon