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Summary
We describe the necessary control infrastructure for experiments with integrated microwave near-field surface-electrode ion traps at cryogenic temperatures with applications in quantum simulation and quantum logic. A trap geometry recently developed in our group [1] implements the coupling between the ions’ motional and internal state using only a single meander-shaped microwave-conductor. The realization of high-fidelity quantum-logic-operations requires a static bias magnetic field, microwave control fields for single-qubit rotations and sideband transitions, dc voltages for trapping fields and reconfigurable rf trapping potentials. We present the current status of the experiment at room temperature and give an outlook for a future setup at cryogenic temperatures.
Transistor amplifiers with preceding control stages on three rf trap electrodes are used to generate a reconfigurable rf trapping potential. In order to realize a field-independent $^{9}$Be$^{+}$ qubit at 22.3 mT, we have designed a set of water-cooled magnetic field coils. The microwave currents are generated in FPGA controlled DDS-modules and pass a frequency multiplier and pulse shaping stage. We use fast DAC-modules [2] from NIST to generate arbitrary waveforms for the pulse shaper and also for the dc voltages in the trap.
The distance between the trapped ions and the trap surface is in the order of 30 µm. As a result, anomalous heating of the ions’ motion may be considerable. In the cryogenic setup currently under construction, we expect these effects to be suppressed [3,4].
[1] M. Carsjens et al.: Appl. Phys. B 114, 243-250 (2014)
[2] R. Bowler et al.: Rev. Sci. Instr. 84, 033108 (2013)
[3] Deslauriers et al., Phys. Rev. Lett. 97, 103007 (2006)
[4] Labaziewicz et al., Phys. Rev. Lett. 100, 013001 (2008)
