Speaker
Mr
Tiago Lima
(KU Leuven, Instituut voor Kern en Stralingsfysica, 3001 Leuven, Belgium)
Description
Mn-doped GaAs, or (Ga,Mn)As, has become the model system in which to explore the physics of carrier-mediated ferromagnetism in semiconductors and the associated spintronic phenomena [1]. In particular, as the most widely studied dilute magnetic semiconductors (DMS), (Ga,Mn)As is an ideal example of how the magnetic behavior of DMS materials is strongly influenced by the lattice sites occupied by the magnetic dopants [1].
We present emission channeling experiments performed at the EC-SLI setup on the lattice location of radioactive 56Mn (t1/2 = 2.56 h) implanted into (Ga,Mn)As thin films. We show that the tetrahedral interstitial site with four As nearest neighbors (TAs) is the energetically favorable site regardless of the interstitial Mn atom being isolated or forming complexes with substitutional Mn. Furthermore, we show that the thermal stability of both substitutional and interstitial Mn, with respect to diffusion and segregation, strongly decreases with increasing Mn concentration (within the several % Mn regime). We discuss the implications of these findings on the understanding of Mn self-compensation in (Ga,Mn)As, and introduce the ongoing emission channeling experiments on the wider class of Mn-doped III-V DMS systems.
[1] T. Dietl and H. Ohno, *Rev. Mod. Phys.* **86**, 187 (2014).
Author
Mr
Tiago Lima
(KU Leuven, Instituut voor Kern en Stralingsfysica, 3001 Leuven, Belgium)
Co-authors
Prof.
André Vantomme
(KU Leuven, Instituut voor Kern en Stralingsfysica, 3001 Leuven, Belgium)
Mr
Angelo Costa
(Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém, Portugal)
Prof.
Bryan L. Gallagher
(School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom)
Mr
Daniel Da Silva
(IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto, Portugal)
Dr
João G. Correia
(Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém, Portugal)
Prof.
João P. Araújo
(IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto, Portugal)
Prof.
Kevin W. Edmonds
(School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom)
Prof.
Kristiaan Temst
(KU Leuven, Instituut voor Kern en Stralingsfysica, 3001 Leuven, Belgium)
Prof.
Lino M.C. Pereira
(KU Leuven, Instituut voor Kern en Stralingsfysica, 3001 Leuven, Belgium)
Prof.
Manuel R. da Silva
(Centro de Fisica Nuclear, Universidade de Lisboa, Lisboa 1649-003, Portugal)
Prof.
Margriet J. Van Bael
(KU Leuven, Laboratory of Solid-State Physics and Magnetism, 3001 Leuven, Belgium)
Dr
Richard P. Campion
(School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom)
Dr
Ulrich Wahl
(IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto, Portugal)
Mrs
Valérie Augustyns
(KU Leuven, Instituut voor Kern en Stralingsfysica, 3001 Leuven, Belgium)
