CEC-ICMC 2015 - Timetable, Abstracts and Presentations

Study of a percolation transition in a dilute two dimensional hole gas at low temperature in GaAs/AlGaAs

Not scheduled

2h

JW Marriott Starr Pass Resort

Poster Presentation ICMC-05 - Thin Films

Speaker

Prof. HASSAN EL IDRISSI (UNIVERSITE HASSAN II CASABLANCA MAROC)

Description

The study of the existence of a possible percolation transition in a dilute two dimensional hole gas in GaAs/AlGaAs within a parallel magnetic field, was the aim of our investigation in this work at a fixed low temperature T= 260 mK. Following the evolution of the electrical conductivity as a function of magnetic field at high carrier densities, we have showed the creation of a densitity inhomogeneity beyond the critical percolation leading to metallic side. The results were proved in the present article by studying the exponent characterizing the type of transition and the variation of the critical percolation densities, which are considered good indicators to observe the percolation transition. In this investigation, we have reanalyzed the data obtained by Kumar et al published in the reference [M. Kumar et al, Solid State Communications Vol. 135. pp. 57-61 (2005) ].