Speaker
Dr
Toufik Bendib
(University of Trento)
Description
In this work, we present a simulation study of low gain avalanche detectors (LGAD). The doping profile of LGAD avalanche region is the most critical technological parameter to be adjusted, affectingbreakdown voltage, gain-voltage characteristics and excess noise factor. In order to better understand the multiplication mechanism, numerical simulations are conducted for LGAD design optimization.
The effect of multiplication region doping profile on the LGAD electrical characteristics has been investigated for two candidate device structures considering both boron and gallium implantations with different doses. In addition, device simulations have been used to predict the temperature dependence of the breakdown voltage and multiplication gain and the excess noise factor induced by avalanche multiplication.
Primary author
Dr
Toufik Bendib
(University of Trento)
Co-authors
Prof.
Gian-Franco Dalla Betta
(INFN and University of Trento)
Dr
Lucio Pancheri
(University of Trento)
