- Hartmut Sadrozinski (SCIPP, UC santa Cruz)
Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
2/18/15, 8:45 AM
This talk reports the design and the measurements of the last fabrication run of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD). These new devices are based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications. The main differences to standard APD detectors are the low gain...
Gregor Kramberger (Jozef Stefan Institute (SI))
2/18/15, 9:05 AM
The studies of initial acceptor removal in high resistivity p-type silicon detectors are scarce, mainly due to minor impact on operation of standard p-type detectors at high fluences. On the other hand initial acceptor removal is of prime importance for radiation hardness of new detector technologies such as Low Gain Amplification Detectors and HV-CMOS sensors, where the doping levels are up...
Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))
2/18/15, 9:25 AM
Measurements of silicon sensors having charge multiplication are candidates for radiation hard detectors for future high energy physics experiments. Important to understand is their applicability in terms of long-term biasing and high voltage cycling, especially in case of a use as tracking devices. The talk will show measurement results of various p-type strip sensors after days to weeks of...
Francesca Cenna (Universita e INFN (IT))
2/18/15, 9:45 AM
I will analyze the effect of space charge in LGAD detectors using laser signals. I will study how the amplitude of the output signal of LGAD sensors depends on the input charge.
Mr Marco Ferrero (University of the Study of Turin)
2/18/15, 10:05 AM
In this contribution I will illustrate preliminary studies towards the development of a methodology to determinate the doping profile of LGAD detectors. The method first, using the analysis of Capacitance-Frequency curve, estimates the optimal measuring frequency, then from the Capacitance-Voltage characteristic curves extracts the doping profile. An alternative method measures the average...
Dr Toufik Bendib (University of Trento)
2/18/15, 10:25 AM
In this work, we present a simulation study of low gain avalanche detectors (LGAD). The doping profile of LGAD avalanche region is the most critical technological parameter to be adjusted, affectingbreakdown voltage, gain-voltage characteristics and excess noise factor. In order to better understand the multiplication mechanism, numerical simulations are conducted for LGAD design...