Speaker
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Description
Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 um thick sensors, interconnected to FE-I3 and FE-I4 read-out chips, have been characterized with radioactive source scans and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of $1.5\times10^{16}$ n$_{eq}$ cm$^{-2}$. The charge collection and tracking efficiency will be compared for the different sensor thicknesses.
Among these samples, planar active edge sensors produced at VTT are particularly interesting given the increased fraction of active area, due to a distance as low as 50 um between the last pixel implants and the activated edge. The tracking efficiency at the edges of these devices has been investigated before and after radiation.
Finally, the outlook for future planar pixel sensor productions will be discussed, with a focus on sensor design at the pixel pitches foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology.
Author
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Co-authors
Botho Albrecht Paschen
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Florian Rettenmeier
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Dr
Richard Nisius
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
