Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
The studies of initial acceptor removal in high resistivity p-type silicon detectors are scarce, mainly due to minor impact on operation of standard p-type detectors at high fluences. On the other hand initial acceptor removal is of prime importance for radiation hardness of new detector technologies such as Low Gain Amplification Detectors and HV-CMOS sensors, where the doping levels are up to several orders of magnitude higher than in standard p-type sensors.
In this work the impact of acceptor removal in different detector structures will be reviewed after neutron and charged hadrons irradiations. The initial acceptor removal rate was found to depend on the concentration and it is faster for charged hadrons than neutrons. The removal constants for different material resistivities ranging from ~1 Ohm cm to >10 kOhm cm will be presented. Possible reasons for such behaviour will be investigated with means to mitigate or enhance the effect.
Author
Gregor Kramberger
(Jozef Stefan Institute (SI))
Co-authors
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Dr
Marko Zavrtanik
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
