10th Anniversary "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

HV CMOS (2) and LGAD (1)

17 Feb 2015, 16:20

"Stringa" Conference Hall (FBK, Trento)

Conveners

HV CMOS (2) and LGAD (1)

• Gregor Kramberger (Jozef Stefan Institute (SI))

2. Capacitively Coupled Hybrid Pixel Assemblies for the CLIC Vertex Detector

Dr Daniel Hynds (CERN)

17/02/2015, 16:20

HV-CMOS devices are currently under investigation for use in the upgrade of current collider experiments and for future accelerators. The CLIC detector requires a vertex detector with minimal material content and high spatial resolution, combined with accurate time stamping to cope with the high rate of beam-induced backgrounds. One of the current options being pursued is the use of HV-CMOS...

3. Studies of non-irradiated and irradiated HVCMOS detectors

Igor Mandic (Jozef Stefan Institute (SI))

17/02/2015, 16:40

The charge collection mechanism in HVCMOS detectors produced by AMS was studied by Edge-TCT and by measuring signals from minimum ionizing particles before and after neutron irradiation. The sensors were produced for investigation of HVCMOS technology for pixel and strip detectors for ATLAS upgrade. In reverse biased HVCMOS sensor thin depleted layer is formed in relatively low resistivity...

23. Issues in the design of Ultrafast silicon detectors

Mr Nicolo Cartiglia (Universita e INFN (IT))

17/02/2015, 17:00

In this contribution I will analyze two different aspects of the design of ultrafast silicon detectors: (i) how to obtain finely pixelated detectors while retaining excellent time resolution, and (ii) how to set the best value of gain without significantly increase the noise.

12. Measurements of the Time Resolution of Low-Gain Avalanche Detectors (LGAD)

Hartmut Sadrozinski (SCIPP, UC santa Cruz)

17/02/2015, 17:20

The Time resolution of LGAD of varying thickness have been explored with lasers and in beam tests. The results agree with simulations and validate the extrapolation for future improvements.

16. Measures with strips LGAD p-type detectors fabricated at CNM-Barcelona

Marta Baselga (CNM-IMB, CSIC)

17/02/2015, 17:40

We will present the measures of strips LGAD fabricated on FZ and epitaxial wafers. Those measures are taken at Diamond Light Source with x-rays as also diodes measured at CNM-Barcelona. We will present also simulations for p-on-p segmented detectors with LGAD performed with Sentaurus TCAD for possible future fabrications.