Feb 15 – 19, 2016
Vienna University of Technology
Europe/Vienna timezone

Development of the microstrip silicon detector for imaging of explosions at a synchrotron radiation beam.

Not scheduled
15m
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien
Board: 46
Poster Semiconductor Detectors

Speaker

Mr Lev Shekhtman (Budker Institute of Nuclear Physics (RU))

Description

In situ imaging of explosions allows to study material properties under very high pressures and temperatures. Synchrotron radiation (SR) is a powerful tool for such studies because of its unique time structure. New beam line at the VEPP-4M storage ring will allow to get X-Ray flux from each bunch close to 10$^6$ photons/channel where channel area is 0.05x0.5 mm$^2$ and average beam energy is about 30 keV. Bunches in the machine can be grouped into trains with 20 ns time gap. In order to meet these requirements a new detector development was started based on Si microstrip technology. The detector with a new dedicated front-end chip will be able to record images with maximum signal equivalent to 10$^6$ photons/channel, with signal to noise ratio of ~10$^3$, spatial resolution of 50 $\mu$m and maximum frame rate of 50 MHz. The detector has to draw very high peak and average currents without affecting the front-end chip, therefore a specific design of Si sensor should be developed. The front-end chip has to provide signal measurements with the dynamic range of about 10$^4$ or more and recording of the signal to an analogue memory with the rate of 50 MHz. The concept of such detector will be discussed in the presentation. The results of the simulations of the main detector parameters and the results of the first measurements with the prototype sensors will be presented.

Primary author

Mr Lev Shekhtman (Budker Institute of Nuclear Physics (RU))

Presentation materials