Speaker
Mr
N. Spencer
(UC Santa Cruz)
Description
For the potential use in future high luminosity application in HEP (e.g. the LHC
upgrade), we evaluated the radiation hardness of a candidate technology for the
front-end of the readout ASIC for silicon strip detectors. The devices were test
transistors of various geometries manufactured in the first generation, IBM SiGe 5HP
process. Current gain as a function of collector current has been measured at
several stages: before and after irradiation with 24 GeV protons up to fluences of
1016 p/cm2, and after annealing at elevated temperature. The analog section of an
amplifier for silicon strips typically has a special front transistor, chosen
carefully to minimize noise and usually requiring a larger current than the other
transistors, and a large number of additional transistors used in shaping sections
and for signal-level discrimination. We will discuss the behavior of both kinds of
transistors, with a particular focus on issues of noise, power and radiation
limitations.
Author
Dr
Alexander A. Grillo
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
Co-authors
Prof.
A. Seiden
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
Mr
A. Sutton
(School of Electrical and Computer Engineering, Georgia Tech)
Prof.
D.E. Dorfan
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
Mr
E. Spencer
(Santa Cruz Institute for Particle Physics, University of California)
Prof.
H. F.-W. Sadrozinski
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
J. Metcalfe
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
Prof.
J.D. Cressler
(School of Electrical and Computer Engineering, Georgia Tech)
Mr
M. Rogers
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
Mr
M. Wilder
(Santa Cruz Institute for Particle Physics, University of California, Santa Cruz)
