Mara Bruzzi
(INFN and University of Florence),
Michael Moll
(CERN)
10/11/2008, 13:30
Eckhart Fretwurst
(University of Hamburg)
10/11/2008, 13:45
I. Pintilie (a), _E. Fretwurst_ (b), A. Junkes (b), G. Lindstroem (b) /(a)/ /National Institute of Materials Physics, Bucharest, Romania
(b) Institute for Experimental Physics, University of Hamburg, Germany
This work is focusing on the investigation of those radiation induced defects causing degradation effects of Silicon detector performance.
Comparative studies of the defects induced...
Prof.
Juozas Vaitkus
(Vilnius University)
10/11/2008, 14:15
The photoconductivity spectra (PC) and lifetime measurement were used for control of transforms and competition of recombination and generation centres in neutron irradiated MCZ Si. In the as-irradiated material the recombination centres prevail and cause mono-exponential decay with nearly linear decrease of carrier lifetime from several microseconds to sub-nanoseconds with enhancement of...
Alexandra Junkes
(Hamburg University)
10/11/2008, 14:35
It was previously shown*, that the bistable cluster defect levels E4a** and E4b** anneal out at the same temperature like the divacancy in neutron and proton irradiated oxygen rich material (MCz and oxygen enriched Epi). Defect concentrations were obtained by means of Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current technique (TSC). In addition oxygen lean Epi and FZ...
Pawel Kaminski
(Institute of Electronic Materials Technology)
10/11/2008, 14:55
Systematic studies of defect centres in epitaxial silicon irradiated with high fluences of 24 GeV/c protons, ranging from 1.6e15 to 1.6e16 cm^-2, have been performed using High-Resolution Photoinduced Transient Spectroscopy (HRPITS). The studies were correlated with the measurements of the leakage current of the epitaxial detectors and the estimations of the electron mobility and lifetime...
10/11/2008, 15:45
Prof.
Manuel Lozano Fantoba
(CNM Instituto de Microelectronica de Barcelona)
10/11/2008, 16:20
In large systems, as ATLAS, the detectors are aligned using mechanical systems and laser beams. Another option, implemented in CMS, is to use the signal generated by the laser beam in the detector to measure its position. Unfortunately, standard detectors present a high light absorption, and therefore it is almost impossible to generate signal in many detector layers using one single laser...
Gregor Kramberger
(Jozef Stefan Institute)
11/11/2008, 09:00
A set of MICRON diodes was irradiated with different fluences of protons and pions up to 1.1e15 p/cm2 followed by additional 2e14 n/cm2. The compensation of the stable damage due to neutron and charged hadron irradiation was observed for the MCz-n samples, while for FZ detectors the damage scales with equivalent fluence. The diodes were annealed up to 10000 min at 60C in steps, during which...
Katharina Kaska
(CERN)
11/11/2008, 09:20
TCT measurements on a series of proton and neutron irradiated MCz p- and n-type detectors.
Jörn Lange
(Hamburg University)
11/11/2008, 09:40
Epitaxial silicon pad diodes of 75 μm, 100 μm and 150 μm thickness and both ST and DO n-type material have been investigated after 24 GeV/c proton irradiation (CERN PS) in an equivalent fluence range between 1e14 n/cm² and 1e16 n/cm². A new TCT setup with 670 nm laser light enabled the measurement of time-resolved electron current pulse shapes in 150 μm thick diodes. Thus the charge correction...
11/11/2008, 10:00
Michael Beimforde
(Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
11/11/2008, 11:00
Two micro-strip sensors were irradiated with X-ray irradiation facility in Karlsruhe to investigate the change of the inter-strip resistance and capacitance as a function of the recieved dose. For one of the structures a p-spray isolation was chosen, for the other one a moderated p-spray.
Gianluigi Casse
(University of Liverpool)
11/11/2008, 11:20
Discussion of VFD, trapping and reverse currrent
Dr
Anthony Affolder
(University of Liverpool)
11/11/2008, 11:40
Measurements of micro-strip sensors made with the RD50 mask sets with various silicon substrates (n-type/p-type FZ/MCz/EPI) have been compared after high doses of neutron and protons comparable to those expected at the SLHC.
Issues of charge collection, sensor power, and annealing performance will be evaluated for both standard (~300 um) and thin (140-200 um) detectors.
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
11/11/2008, 12:00
N-type MCz-Si strip detectors with an area of 16 cm^2 were irradiated to several different fluences up to 3x10^15 1 MeV neq/cm^2 with protons or with neutrons and protons depending on the detector. The beam test was carried out at CERN H2 area using a reference beam telescope and an efficient cooling system.
Mr
Ricardo Marco
(IFIC-Instituto de Física Corpuscular)
11/11/2008, 13:40
A readout system for microstrip silicon sensors has been developed as a result of a collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels...
Heinz Pernegger
(CERN)
11/11/2008, 14:00
Jhon Acosta
(Univ. of Puerto Rico - Mayaguez)
11/11/2008, 14:20
In order to establish a fluence limit for the radiation hardness of the CMS barrel pixel detector and for conventional n-on-n sensors in general, pixel sensors of the size of one CMS pixel readout (PSI46V2.1) have been bumpbonded and irradiated with positive pions up to 6E14 Neq/cm2 and with protons up to 4E15 Neq/cm2. The sensors were taken from production wafers of the CMS barrel pixel...
Anna Macchiolo
(Max-Planck-Institut fur Physik)
11/11/2008, 14:40
We present a production of n-in-n and n-in-p planar pixel sensors on Fz and MCz silicon that we intend to perform with CiS. We aim to investigate the performances
of these detectors at SLHC fluences comparing different bulk materials and to study
the feasibility of operating planar pixel sensors with slimmed or active edges.
Elena Verbitskaya
(A.F. Ioffe Physical Technical Inst.)
11/11/2008, 16:00
The overview on silicon edgeless strip detectors developed for close-to-beam experiments at CERN will be presented. The recent progress of these detectors is related to the elaboration of the specific design - edgeless detectors with current terminating structure that was successfully realized in p-on-n Si edgeless detectors for the TOTEM experiment. The potential and electric field...
Dr
Giulio Pellegrini
(Centro Nacional de Microelectronica CNM-IMB-CSIC)
11/11/2008, 16:20
I will report on the fabrication of new 3D detectors and the future plan for bump bonding Atlas pixels and Medipix2 chips.
Ulrich Parzefall
(Fakultaet fuer Physik)
11/11/2008, 16:40
A 3D stc micro strip detector was placed in a beam of 180GeV pions at CERN in 2007. The detector was connected to analogue read-out electronics as used in the tracking system of the LHCb experiment. We present the results from the analyis of the test beam data, including signal/noise ratio measurements and efficiciency studies. This work has been done in close collaboration with Trento...
Michael Koehler
(Universitaet Freiburg)
11/11/2008, 17:00
In July 2008, a testbeam with double-sided double type column (ddtc) 3D detectors was performed at the CERN SPS. It was provided by the Helsinki group in the framework of CMS. This talk presents the testbeam setup and a detector under test, produced by FBK-irst. The current status of the analysis, which is done in collaboration with the groups from Glasgow and Helsinki, and first (preliminary)...
Vladimir Eremin
(Ioffe Physical Technical Institute RAS)
11/11/2008, 17:20
The different constructions of silicon 3D detectors are analyzed and tabulated in terms of combinations of two simple elements: the p-n junction and the ohmic columns. In the p-n junction column two parts are recognized: a cylindrical one which radius increases with the bias, and a semi-spherical “dead” tip with a maximal electric field due to the focusing effect. This consideration allows...
11/11/2008, 19:10
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