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13th RD50 Workshop

10–12 Nov 2008
CERN
Europe/Zurich timezone

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Contribution List

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  1. 8. Introduction
    Mara Bruzzi (INFN and University of Florence), Michael Moll (CERN)
    10/11/2008, 13:30
  2. 9. Radiation induced point- and cluster-related defects with strong impact to damage properties of silicon detectors
    Eckhart Fretwurst (University of Hamburg)
    10/11/2008, 13:45
    I. Pintilie (a), _E. Fretwurst_ (b), A. Junkes (b), G. Lindstroem (b) /(a)/ /National Institute of Materials Physics, Bucharest, Romania (b) Institute for Experimental Physics, University of Hamburg, Germany This work is focusing on the investigation of those radiation induced defects causing degradation effects of Silicon detector performance. Comparative studies of the defects induced...
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  3. 3. Anneal dependent variations of lifetime and deep levels in neutron irradiated MCZ Si
    Prof. Juozas Vaitkus (Vilnius University)
    10/11/2008, 14:15
    The photoconductivity spectra (PC) and lifetime measurement were used for control of transforms and competition of recombination and generation centres in neutron irradiated MCZ Si. In the as-irradiated material the recombination centres prevail and cause mono-exponential decay with nearly linear decrease of carrier lifetime from several microseconds to sub-nanoseconds with enhancement of...
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  4. 6. Recent results on bistable cluster related defects
    Alexandra Junkes (Hamburg University)
    10/11/2008, 14:35
    It was previously shown*, that the bistable cluster defect levels E4a** and E4b** anneal out at the same temperature like the divacancy in neutron and proton irradiated oxygen rich material (MCz and oxygen enriched Epi). Defect concentrations were obtained by means of Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current technique (TSC). In addition oxygen lean Epi and FZ...
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  5. 18. Characterisation of defect centres in epitaxial silicon irradiated with high proton fluences
    Pawel Kaminski (Institute of Electronic Materials Technology)
    10/11/2008, 14:55
    Systematic studies of defect centres in epitaxial silicon irradiated with high fluences of 24 GeV/c protons, ranging from 1.6e15 to 1.6e16 cm^-2, have been performed using High-Resolution Photoinduced Transient Spectroscopy (HRPITS). The studies were correlated with the measurements of the leakage current of the epitaxial detectors and the estimations of the electron mobility and lifetime...
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  6. 14. Discussion Session: Defect and Material Characterization
    10/11/2008, 15:45
  7. 17. Infrared transparent detectors
    Prof. Manuel Lozano Fantoba (CNM Instituto de Microelectronica de Barcelona)
    10/11/2008, 16:20
    In large systems, as ATLAS, the detectors are aligned using mechanical systems and laser beams. Another option, implemented in CMS, is to use the signal generated by the laser beam in the detector to measure its position. Unfortunately, standard detectors present a high light absorption, and therefore it is almost impossible to generate signal in many detector layers using one single laser...
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  8. 12. Radiation damage of video device in a fusion stellarator
    Gabor Nafradi (BUTE-INT)
    10/11/2008, 16:40
    The EDICAM (Event Detection Intelligent Camera) will be used for video diagnostic in the Endelstein 7X. The camera consists of three modules, the Sensor Module (SM) the Image Processing and Control Unit module and the Image Readout Card module. The sensor module of the camera will be located at the plasma facing end of the selected tangential ports. Because of this the SM should operate in...
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  9. 13. Annealing studies of mixed irradiated MICRON diodes
    Gregor Kramberger (Jozef Stefan Institute)
    11/11/2008, 09:00
    A set of MICRON diodes was irradiated with different fluences of protons and pions up to 1.1e15 p/cm2 followed by additional 2e14 n/cm2. The compensation of the stable damage due to neutron and charged hadron irradiation was observed for the MCz-n samples, while for FZ detectors the damage scales with equivalent fluence. The diodes were annealed up to 10000 min at 60C in steps, during which...
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  10. 19. TCT measurements on MCz
    Katharina Kaska (CERN)
    11/11/2008, 09:20
    TCT measurements on a series of proton and neutron irradiated MCz p- and n-type detectors.
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  11. 4. Charge collection and trapping effects in 75 μm, 100 μm and 150 μm thick n-type epitaxial silicon diodes after proton irradiation
    Jörn Lange (Hamburg University)
    11/11/2008, 09:40
    Epitaxial silicon pad diodes of 75 μm, 100 μm and 150 μm thickness and both ST and DO n-type material have been investigated after 24 GeV/c proton irradiation (CERN PS) in an equivalent fluence range between 1e14 n/cm² and 1e16 n/cm². A new TCT setup with 670 nm laser light enabled the measurement of time-resolved electron current pulse shapes in 150 μm thick diodes. Thus the charge correction...
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  12. 21. Discussion: Pad Detector Characterization and Defect Engineering
    11/11/2008, 10:00
  13. 20. X-Ray irradiation on p-type micro-strip detectors with p-spray and moderated p-spray isolations
    Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)
    11/11/2008, 11:00
    Two micro-strip sensors were irradiated with X-ray irradiation facility in Karlsruhe to investigate the change of the inter-strip resistance and capacitance as a function of the recieved dose. For one of the structures a p-spray isolation was chosen, for the other one a moderated p-spray.
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  14. 2. Questions about extrapolation at SLHC doses of silicon parameter measured after lower fluences
    Gianluigi Casse (University of Liverpool)
    11/11/2008, 11:20
    Discussion of VFD, trapping and reverse currrent
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  15. 0. Measurements of CCE/IV/annealing behaviour of microstrip detectors irradiated with reactor neutrons and protons to SLHC doses
    Dr Anthony Affolder (University of Liverpool)
    11/11/2008, 11:40
    Measurements of micro-strip sensors made with the RD50 mask sets with various silicon substrates (n-type/p-type FZ/MCz/EPI) have been compared after high doses of neutron and protons comparable to those expected at the SLHC. Issues of charge collection, sensor power, and annealing performance will be evaluated for both standard (~300 um) and thin (140-200 um) detectors.
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  16. 26. Test beam results of heavily irradiated magnetic Czochralski silicon (MCz-Si) strip detectors
    Panja-Riina Luukka (Helsinki Institute of Physics HIP)
    11/11/2008, 12:00
    N-type MCz-Si strip detectors with an area of 16 cm^2 were irradiated to several different fluences up to 3x10^15 1 MeV neq/cm^2 with protons or with neutrons and protons depending on the detector. The beam test was carried out at CERN H2 area using a reference beam telescope and an efficient cooling system.
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  17. 7. Status of the ALIBAVA readout system
    Mr Ricardo Marco (IFIC-Instituto de Física Corpuscular)
    11/11/2008, 13:40
    A readout system for microstrip silicon sensors has been developed as a result of a collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels...
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  18. 27. Pixel Sensor Measurements at CERN
    Heinz Pernegger (CERN)
    11/11/2008, 14:00
  19. 29. Signal height in irradiated Silicon Pixel Detectors
    Jhon Acosta (Univ. of Puerto Rico - Mayaguez)
    11/11/2008, 14:20
    In order to establish a fluence limit for the radiation hardness of the CMS barrel pixel detector and for conventional n-on-n sensors in general, pixel sensors of the size of one CMS pixel readout (PSI46V2.1) have been bumpbonded and irradiated with positive pions up to 6E14 Neq/cm2 and with protons up to 4E15 Neq/cm2. The sensors were taken from production wafers of the CMS barrel pixel...
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  20. 16. Production of n-in-n and n-in-p pixels on Fz and MCz silicon with CiS
    Anna Macchiolo (Max-Planck-Institut fur Physik)
    11/11/2008, 14:40
    We present a production of n-in-n and n-in-p planar pixel sensors on Fz and MCz silicon that we intend to perform with CiS. We aim to investigate the performances of these detectors at SLHC fluences comparing different bulk materials and to study the feasibility of operating planar pixel sensors with slimmed or active edges.
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  21. 15. Discussion: Full Detector Systems
    11/11/2008, 15:00
  22. 24. Progress in R & D on silicon edgeless strip detectors with Current Terminating Structure
    Elena Verbitskaya (A.F. Ioffe Physical Technical Inst.)
    11/11/2008, 16:00
    The overview on silicon edgeless strip detectors developed for close-to-beam experiments at CERN will be presented. The recent progress of these detectors is related to the elaboration of the specific design - edgeless detectors with current terminating structure that was successfully realized in p-on-n Si edgeless detectors for the TOTEM experiment. The potential and electric field...
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  23. 11. New fabrication of 3D detectors, np and pn devices
    Dr Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)
    11/11/2008, 16:20
    I will report on the fabrication of new 3D detectors and the future plan for bump bonding Atlas pixels and Medipix2 chips.
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  24. 1. 3D stc Strip Detector Test Beam Results
    Ulrich Parzefall (Fakultaet fuer Physik)
    11/11/2008, 16:40
    A 3D stc micro strip detector was placed in a beam of 180GeV pions at CERN in 2007. The detector was connected to analogue read-out electronics as used in the tracking system of the LHCb experiment. We present the results from the analyis of the test beam data, including signal/noise ratio measurements and efficiciency studies. This work has been done in close collaboration with Trento...
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  25. 5. Analysis of the 2008 Testbeam with 3D ddtc Detectors (Status Report)
    Michael Koehler (Universitaet Freiburg)
    11/11/2008, 17:00
    In July 2008, a testbeam with double-sided double type column (ddtc) 3D detectors was performed at the CERN SPS. It was provided by the Helsinki group in the framework of CMS. This talk presents the testbeam setup and a detector under test, produced by FBK-irst. The current status of the analysis, which is done in collaboration with the groups from Glasgow and Helsinki, and first (preliminary)...
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  26. 25. Predictions for 3D detector operation in SuperLHC environment
    Vladimir Eremin (Ioffe Physical Technical Institute RAS)
    11/11/2008, 17:20
    The different constructions of silicon 3D detectors are analyzed and tabulated in terms of combinations of two simple elements: the p-n junction and the ohmic columns. In the p-n junction column two parts are recognized: a cylindrical one which radius increases with the bias, and a semi-spherical “dead” tip with a maximal electric field due to the focusing effect. This consideration allows...
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  27. 22. Discussion on 3D detectors
    11/11/2008, 17:40
  28. 23. Dinner
    11/11/2008, 19:10
    # Public Bus Leaving CERN Bus stop at 19:21 sharp!! Restaurant Home Page Apéro : Kir Entrée : Terrine aux poivres verts garnie Plat : Médaillon de chevreuil, garniture de chasse Dessert : Glaces/Sorbets Café Boissons : 1 bouteille Pinot Noir « Les Faunes » pour trois personnes, Bouteilles d’eau.
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  29. 28. Discussions
    12/11/2008, 09:00