Speaker
Jhon Acosta
(Univ. of Puerto Rico - Mayaguez)
Description
In order to establish a fluence limit for the radiation hardness of the CMS barrel pixel detector and for conventional n-on-n sensors in general, pixel sensors of the size of one CMS pixel readout (PSI46V2.1) have been bumpbonded and irradiated with positive pions up to 6E14 Neq/cm2 and with protons up to 4E15 Neq/cm2. The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7 k Ohm cm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent an approximation to minimum ionizing particles. The bias dependence of the signal for a wide range of fluences will be presented.
Author
Jhon Acosta
(Univ. of Puerto Rico - Mayaguez)
Co-authors
Alice Bean
(Univ. of Kansas)
Beat Meier
(PSI)
Christopher Martin
(Univ. of Kansas)
Jennifer Sibille
(Univ. of Kansas)
Peter Trueb
(PSI, ETH Zuerich)
Tilman Rohe
(PSI)
Urs Langenegger
(ETH Zuerich)
Valeria Radicci
(PSI, Univ. of Kansas)
Wolfram Erdmann
(PSI)
