8-10 June 2016
Asia/Bangkok timezone

Determination of non-uniform graphene thickness on SiC (0001) by X-ray diffraction

Not scheduled
Poster presentation Surface, Interface and Thin Films


Akkawat Ruammaitree


Graphene has excellent electronic properties however the electronic properties considerably depend on its thickness. In this report, thickness distribution analysis of epitaxial graphene films grown on Si-terminated SiC (0001) was demonstrated by using X-ray diffraction (XRD) pattern and a simple equation. Although this technique is simple, it provides fairly accurate information on layer spacing and thickness distribution of graphene layers. Accuracy of these results was confirmed by low accelerating voltage scanning electron microscopy and angle resolved photoemission spectroscopy.

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