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2nd TCT Workshop

17–18 Oct 2016
Jožef Stefan Institute
Europe/Zurich timezone

Session

Results from recent TCT measurements on different detector structures

17 Oct 2016, 16:00
Main Lecture Hall (Jožef Stefan Institute)

Main Lecture Hall

Jožef Stefan Institute

Jamova 39 SI-1000 Ljubljana

Presentation materials

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  1. 9. Edge TCT on AMS H35 HV-CMOS devices
    Emanuele Cavallaro (IFAE - Barcelona (ES))
    17/10/2016, 16:00
  2. 16. Edge-TCT measurements on different HVCMOS devices
    Bojan Hiti (Jozef Stefan Institute (SI))
    17/10/2016, 16:20
  3. 11. Edge-TCT measurements
    Finn Feindt (University of Hamburg)
    18/10/2016, 09:30
  4. 10. TCT measurements on 3D detectors
    Lluis Simon
    18/10/2016, 09:50
  5. 24. TCT measurements on diodes
    William Holmkvist (C)
    18/10/2016, 10:10
  6. 26. Temperature dependance of LGAD response
    Roberto Mulargia (Universita e INFN Torino (IT))
    18/10/2016, 10:30
  7. 17. Comparison of different simulations tools and update on KDetSim
    Gregor Kramberger (Jozef Stefan Institute (SI))
  8. 12. Mobility measurements
  9. 18. TCAD simulations
    Marco Bomben (Centre National de la Recherche Scientifique (FR))
  10. 19. Update on TRACS simulation
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