The CiS research institute is engaged in developments of radiation detector technologies on several different fields. Current projects are dealing e.g. with large area thinned sensors, active edge sensors, sensor-chip packaging technologies and defect engineering.
For large area sensors, the need for smaller thicknesses can be approached by etching cavities to the sensors back side while guaranteeing stability on wafer level by thick frames at the edges. A first n-in-p pixel run with membranes up to 4x4cm² and target thicknesses of 100 and 150µm is finished and shows promising results. The technology is currently transferred to 6” wafer size. First results of etching trials with dummy wafers with larger thinned areas will be shown as well.
We are now focused on development of large area thinned double sided detectors and very thin dead layers.
An active edge sensor run is finished. Three side wall doping methods have been tested in combination with two wafer thicknesses as well as with n- and p-substrates. Electrical measurements show the functionality of sensors with inactive edge widths down to 50µm.
CiS is currently focusing on developing additional technologies for custom respectively application specific hybrid and multifunctional module solutions which match to each other detector technology, for instance multifunctional large area silicon submounts.