Conveners
Session 4: Poster Session
- Maurizio Boscardin (FBK Trento)
In this work, carried out in the framework of APiX2 project funded by Istituto Nazionale di Fisica Nucleare (INFN), a pixelated device for the direct detection of charged particles is described and characterization measurements are reported. The working principle of the device is the discrimination between particle-triggered detections and dark counts, obtained with a coincidence circuit...
In view of the LHC roadmap towards the High Luminosity LHC (HL-LHC), n-on-p silicon technology is a promising candidate to achieve a large area equipped with pixel sensors, since it is radiation hard and cost effective.
The talk reports on the first batch of n-on-p edgeless planar pixel sensors produced by FBK-CMM using an Active Edge technology where the detector edge is made by staggered...
During the 2023-2024 shutdown, the Large Hadron Collider (LHC) will be upgraded to reach an instantaneous luminosity up to 7×10 cm-2 s-1. This upgrade of the accelerator is called High-Luminosity LHC (HL-LHC). The ATLAS and CMS detectors will be replaced to meet the challenges of HL-LHC: an average of 200 pile-up events in every bunch crossing and an integrated luminosity of 3000 fb-1 over...
The development of 3D Diamond detectors is raising interesting prospects for future Particle Physics experiments due to the increased radiation hardness resulting from a combination of a 3D geometry and the use of an inherently radiation hard material. As well as for medical applications due to the tissue equivalence of diamond.
Test beams have been performed on various 3D Diamond devices to...
We used to measure total doping profile using Secondary Ion Mass Spectrometer (SIMS). But to study the effects of irradiation on the pixel silicon we need to know how is the doping profile is changing after the irradiation. This talk addresses the study of the irradiation effects on active doping profile by
developing new promising method call Transfer Linear Method (TLM). The TLM method...
We report on the initial results from a TCAD simulation study aimed at investigating the breakdown voltage and read-out electrode isolation properties of 3D sensors. Both these features can vary significantly with sensor geometry and process details; moreover, after irradiation, they strongly depend on both bulk damage and surface damage, making any prediction based on analytical models...
