Speaker
Mr
Pedro Goncalo Dias De Almeida
(FCT Fundacao para a Ciencia e a Tecnologia (PT))
Description
Measurements were made on the depletions voltages of pad diodes of different thickness and resistivity irradiated with protons and neutrons up to 7E15 $n_{eq}/cm^2$.
Two sets of diodes were used.
Epitaxial diodes with a thickness of 50 $\mu$m and different resistivities (10, 50, 250 and 1000 Ohm cm).
Float zone diodes with a resistivity of more than 10 kOhm cm with different thicknesses (100, 150, 200, 285 um).
The depletion voltage is used to extract the effective doping concentration of these devices.
A fit to the data is then done to extrapolate the acceptor removal rate.
Primary authors
Mr
Pedro Goncalo Dias De Almeida
(FCT Fundacao para a Ciencia e a Tecnologia (PT))
Isidre MATEU
(Centro de Investigaciones Energéti cas Medioambientales y Tecno)
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Michael Moll
(CERN)
