Focus on:  Hide Contributions
Back to Conference View
Login
30th RD50 Workshop (Krakow)

from Monday 5 June 2017 (08:00) to Wednesday 7 June 2017 (17:00)
Krakow

        : Sessions
    /     : Talks
        : Breaks
5 Jun 2017
6 Jun 2017
7 Jun 2017
AM
09:00
Workshop opening (until 09:30) ()
09:00 Welcome - Prof. Władysław Dąbrowski (AGH University of Science and Technology)   ()
09:30
Pixel and strip sensors - Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL)) (until 14:30) ()
09:30 Investigation of modified ATLAS pixel implantations - Andreas Gisen (Technische Universitaet Dortmund (DE))   ()
09:50 Charge collection and electric field properties of irradiated thin n-in-p planar pixel sensors - Natascha Savic (Max-Planck-Institut fur Physik (DE))   ()
10:10 3D-silicon and passive CMOS pixel-detectors for the ATLAS pixel detector upgrade - David-Leon Pohl (University of Bonn (DE))   ()
10:30 --- Coffe break ---
11:00 Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences - Joern Lange (IFAE Barcelona)   ()
11:20 Characterization of small pitch 3D sensors from CNM - Esteban Curras Rivera (Universidad de Cantabria (ES))   ()
11:40 Measurements of Irradiated 3D Strip Sensors - Maria Manna (Universitat Autònoma de Barcelona (ES))   ()
12:00 Efficiency of the LHCb VELO sensors - David Hutchcroft (U) David Hutchcroft (University of Liverpool (GB))   ()
12:20 --- Lunch break ---
13:20 Experimental determination of the Hardness factor for the ATLAS Irradiation Facility - Tony Price (University of Birmingham (GB))   ()
13:40 Characterization of ALD-grown aluminum oxide field insulators for silicon detectors - Jennifer Ott (Helsinki Institute of Physics (FI))   ()
14:00 Discussion - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))   ()
09:00
Transient current technique - Eckhart Fretwurst (II. Institut fuer Experimentalphysik) (until 11:10) ()
09:00 An extenision of Ramo's theorem include resistive elements - Werner Riegler (CERN)   ()
09:30 Two Photon Absorption TCT on HVCMOS, LGADs and pin diodes, - Marcos Fernandez Garcia (Universidad de Cantabria (ES))   ()
09:50 Light absorption and charge collection of highly irradiated silicon sensors - Christian Scharf (Hamburg University (DE))   ()
10:10 Discussion - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)   ()
10:40 --- Coffee break ---
11:10
Detectors with gain - Amedeo Staiano (Universita e INFN Torino (IT)) Roberta Arcidiacono (Universita e INFN Torino (IT)) (until 17:00) ()
11:10 Analytic expressions for time resolution of silicon pixel sensors - Werner Riegler (CERN)   ()
11:40 Measurements of the timing resolution of Ultra-Fast Silicon Detectors vs. Temperature, Fluence, Thickness, Manufacturer. - Hartmut Sadrozinski (University of California,Santa Cruz (US))   ()
12:00 Laboratory measurement and progress in Low-Gain Avalanche Diodes - Valentina Sola (Universita e INFN Torino (IT)) Valentina Sola (Universita e INFN Torino (IT))   ()
12:20 Status of LGAD productions at CNM - Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))   ()
12:40 --- Lunch break ---
13:40 Study of Deep Diffused APDs for Timing Applications - Matteo Centis Vignali (CERN)   ()
14:00 Initial studies of irradiated Ga doped LGADs - Gregor Kramberger (Jozef Stefan Institute (SI))   ()
14:20 Study of the onset of multiplication in proton irradiated LGADs - Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))   ()
14:40 Timing performance and gain analysis of heavily irradiated LGAD diodes - Dr Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))   ()
15:00 --- Coffee break ---
15:30 Thin LGADs characterization using Ion Beam Induced Charge (IBIC) and Time-resolved IBIC at the Centro Nacional de Aceleradores - Dr Carmen JIMENEZ RAMOS (National Accelerator Center)   ()
15:50 Beam test studies of the LGAD sensors at FNAL - Nicolo Cartiglia (Universita e INFN Torino (IT))   ()
16:10 Radiation damage in thin LGADs produced by HPK - Gregor Kramberger (Jozef Stefan Institute (SI))   ()
16:30 Discussion - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))   ()
09:00
FCC and future developments - Gianluigi Casse (University of Liverpool (GB)) (until 10:00) ()
09:00 Status & Challenges of Tracker Design for FCC-hh - Zbynek Drasal (on behalf of the FCC-hh detector working group) (CERN)   ()
09:30 Discussion - Gianluigi Casse (University of Liverpool (GB))   ()
10:00
CMOS - Eva Vilella Figueras (University of Liverpool (GB)) (until 13:20) ()
10:00 Charge collection properties of irradiated CMOS detectors - Igor Mandic (Jozef Stefan Institute (SI))   ()
10:20 Radiation hardness of a CMOS sensor process for a novel Depleted Monolithic Active Pixel Sensor - Bojan Hiti (Jozef Stefan Institute (SI))   ()
10:40 --- Coffee break ---
11:10 HV-CMOS testing and design - Emanuele Cavallaro (IFAE - Barcelona (ES))   ()
11:30 Recent progress of the RD50 collaboration towards an R&D HV-CMOS submission in the 150 nm node from LFoundry - Eva Vilella Figueras (University of Liverpool (GB))   ()
11:50 Discussion - Eva Vilella Figueras (University of Liverpool (GB))   ()
12:20 --- Lunch break ---
PM
14:30
Device simulation - Gregor Kramberger (Jozef Stefan Institute (SI)) (until 17:10) ()
14:30 Depletion voltage and leakage current simulation of the ATLAS Pixel Detector according to the Hamburg model - Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))   ()
14:50 TCAD simulations of CMOS Hi-Res MAPS detectors - Dr E.Giulio Villani (STFC Ruthrerford Appleton Laboratory)   ()
15:10 --- Coffee break ---
15:40 TCAD simulation of silicon detectors: A validation tool for the development of LGAD - Dr Marco Mandurrino (Universita e INFN Torino (IT)) Dr Marco Mandurrino (INFN Torino (IT))   ()
16:00 Simulation and characterisation of a low gain avalanche detector for particle physics and synchrotron applications - Neil Moffat (University of Glasgow (GB)) Mr Neil Moffat (University of Glasgow)   ()
16:20 LGAD Simulations with the Ga doping: an exploration - Prof. Francisco Rogelio Palomo Pinto (ETSI Universidad de Sevilla)   ()
16:40 Discussion - Gregor Kramberger (Jozef Stefan Institute (SI))   ()
18:30
Excursion and Welcome drink at Lubicz Brewery (until 20:30) ()
17:00
Collaboration Board (until 19:00) ()
13:20
Defect and Material Engineering - Michael Moll (CERN) (until 15:30) ()
13:20 Determination of the p-spray profile for n$^+$ p silicon sensors using a MOSFET - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)   ()
13:40 Anneal induced transforms of radiation defects in hadron and electron irradiated Si - Ms Dovile Meskauskaite (Vilnius University, Institute of Applied Research)   ()
14:00 Effect of nitrogen doping on characteristics of pad detectors irradiated with high proton fluences - Prof. Paweł Kamiński (Institute of Electronic Materials Technology)   ()
14:20 Measurement of the acceptor removal rate in silicon pad diodes - Mr Pedro Goncalo Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))   ()
14:40 Update on the RD50 project NitroStrip - Marta Baselga Bacardit (KIT - Karlsruhe Institute of Technology (DE))   ()
15:00 Discussion - Michael Moll (CERN)   ()
Powered by Indico v3.3.6-pre