Name: 30th RD50 Workshop (Krakow)
Start: 2017-06-05T08:00:00+02:00
End: 2017-06-07T17:00:00+02:00
Location: Krakow

30th RD50 Workshop (Krakow)

from Monday 5 June 2017 (08:00) to Wednesday 7 June 2017 (17:00)

Monday 5 June 2017
09:00
09:00 - 09:30
Contributions

09:00 Welcome - Władysław Dąbrowski (AGH University of Science and Technology)
09:30
09:30 - 14:30
Contributions

09:30 Investigation of modified ATLAS pixel implantations - Andreas Gisen (Technische Universitaet Dortmund (DE))

09:50 Charge collection and electric field properties of irradiated thin n-in-p planar pixel sensors - Natascha Savic (Max-Planck-Institut fur Physik (DE))

10:10 3D-silicon and passive CMOS pixel-detectors for the ATLAS pixel detector upgrade - David-Leon Pohl (University of Bonn (DE))

11:00 Radiation hardness of small-pitch 3D pixel sensors up to HL-LHC fluences - Joern Lange (IFAE Barcelona)

11:20 Characterization of small pitch 3D sensors from CNM - Esteban Curras Rivera (Universidad de Cantabria (ES))

11:40 Measurements of Irradiated 3D Strip Sensors - Maria Manna (Universitat Autònoma de Barcelona (ES))

12:00 Efficiency of the LHCb VELO sensors - David Hutchcroft (University of Liverpool (GB)) David Hutchcroft (U)

13:20 Experimental determination of the Hardness factor for the ATLAS Irradiation Facility - Tony Price (University of Birmingham (GB))

13:40 Characterization of ALD-grown aluminum oxide field insulators for silicon detectors - Jennifer Ott (Helsinki Institute of Physics (FI))

14:00 Discussion - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
14:30
14:30 - 17:10
Contributions

14:30 Depletion voltage and leakage current simulation of the ATLAS Pixel Detector according to the Hamburg model - Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))

14:50 TCAD simulations of CMOS Hi-Res MAPS detectors - E.Giulio Villani (STFC Ruthrerford Appleton Laboratory)

15:40 TCAD simulation of silicon detectors: A validation tool for the development of LGAD - Marco Mandurrino (INFN Torino (IT)) Marco Mandurrino (Universita e INFN Torino (IT))

16:00 Simulation and characterisation of a low gain avalanche detector for particle physics and synchrotron applications - Neil Moffat (University of Glasgow) Neil Moffat (University of Glasgow (GB))

16:20 LGAD Simulations with the Ga doping: an exploration - Francisco Rogelio Palomo Pinto (ETSI Universidad de Sevilla)

16:40 Discussion - Gregor Kramberger (Jozef Stefan Institute (SI))
18:30 Excursion and Welcome drink at Lubicz Brewery
Excursion and Welcome drink at Lubicz Brewery
18:30 - 20:30
Tuesday 6 June 2017
09:00
09:00 - 11:10
Contributions

09:00 An extenision of Ramo's theorem include resistive elements - Werner Riegler (CERN)

09:30 Two Photon Absorption TCT on HVCMOS, LGADs and pin diodes, - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

09:50 Light absorption and charge collection of highly irradiated silicon sensors - Christian Scharf (Hamburg University (DE))

10:10 Discussion - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
11:10
11:10 - 17:00
Contributions

11:10 Analytic expressions for time resolution of silicon pixel sensors - Werner Riegler (CERN)

11:40 Measurements of the timing resolution of Ultra-Fast Silicon Detectors vs. Temperature, Fluence, Thickness, Manufacturer. - Hartmut Sadrozinski (University of California,Santa Cruz (US))

12:00 Laboratory measurement and progress in Low-Gain Avalanche Diodes - Valentina Sola (Universita e INFN Torino (IT)) Valentina Sola (Universita e INFN Torino (IT))

12:20 Status of LGAD productions at CNM - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

13:40 Study of Deep Diffused APDs for Timing Applications - Matteo Centis Vignali (CERN)

14:00 Initial studies of irradiated Ga doped LGADs - Gregor Kramberger (Jozef Stefan Institute (SI))

14:20 Study of the onset of multiplication in proton irradiated LGADs - Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))

14:40 Timing performance and gain analysis of heavily irradiated LGAD diodes - Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))

15:30 Thin LGADs characterization using Ion Beam Induced Charge (IBIC) and Time-resolved IBIC at the Centro Nacional de Aceleradores - Carmen JIMENEZ RAMOS (National Accelerator Center)

15:50 Beam test studies of the LGAD sensors at FNAL - Nicolo Cartiglia (Universita e INFN Torino (IT))

16:10 Radiation damage in thin LGADs produced by HPK - Gregor Kramberger (Jozef Stefan Institute (SI))

16:30 Discussion - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
17:00 Collaboration Board Meeting
Collaboration Board Meeting
17:00 - 19:00
Wednesday 7 June 2017
09:00
09:00 - 10:00
Contributions

09:00 Status & Challenges of Tracker Design for FCC-hh - Zbynek Drasal (on behalf of the FCC-hh detector working group) (CERN)

09:30 Discussion - Gianluigi Casse (University of Liverpool (GB))
10:00
10:00 - 13:20
Contributions

10:00 Charge collection properties of irradiated CMOS detectors - Igor Mandic (Jozef Stefan Institute (SI))

10:20 Radiation hardness of a CMOS sensor process for a novel Depleted Monolithic Active Pixel Sensor - Bojan Hiti (Jozef Stefan Institute (SI))

11:10 HV-CMOS testing and design - Emanuele Cavallaro (IFAE - Barcelona (ES))

11:30 Recent progress of the RD50 collaboration towards an R&D HV-CMOS submission in the 150 nm node from LFoundry - Eva Vilella Figueras (University of Liverpool (GB))

11:50 Discussion - Eva Vilella Figueras (University of Liverpool (GB))
13:20
13:20 - 15:30
Contributions

13:20 Determination of the p-spray profile for n$^+$ p silicon sensors using a MOSFET - Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

13:40 Anneal induced transforms of radiation defects in hadron and electron irradiated Si - Dovile Meskauskaite (Vilnius University, Institute of Applied Research)

14:00 Effect of nitrogen doping on characteristics of pad detectors irradiated with high proton fluences - Paweł Kamiński (Institute of Electronic Materials Technology)

14:20 Measurement of the acceptor removal rate in silicon pad diodes - Pedro Goncalo Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))

14:40 Update on the RD50 project NitroStrip - Marta Baselga Bacardit (KIT - Karlsruhe Institute of Technology (DE))

15:00 Discussion - Michael Moll (CERN)

Choose timezone