Conveners
Detectors with gain
- Amedeo Staiano (Universita e INFN Torino (IT))
- Roberta Arcidiacono (Universita e INFN Torino (IT))
We report on the performance of UFSD (Ultra-Fast Silicon Detectors) from two vendors CNM (LGAD thickness 45um) and HPK (LGAD thickness 50 and 80um).
We have measured pre-rad and after neutron fluences of 6e14 and 2e15 n/cm^2 the leakage current, gain, time jitter, time resolution and the value of Landau fluctuations. The pre-rad measurements were performed at three temperatures (+20C, 0C,...
In this contribution we will review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors.
Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Diodes, which are silicon detectors with an internal multiplication mechanism so that they generate a signal...
This talk will report the status of simulations and fabrications of LGAD at CNM.
Deep diffused avalanche photodiodes (APD) are being studied as timing detectors for minimum ionizing particles.
In this talk, the first results and experiences in the operation of these devices are presented.
LGADs have been produced by CNM where Ga replaced B as a dopant in the multiplication layer in order to increase radiation hardness of LGADs. Although the devices exhibited early breakdown before irradiations they were fully functional after neutron irradiation. TCT and charge collection measurements with 90Sr were performed on devices irradiated up to the equivalent fluences of 6e15 cm-2....
TCT and CV/IV measurements were performed on LGADs from CNM Run 7859 irradiated with protons up to 1E14 n$_{eq}$/cm$^2$. These studies were particularly focused on analysing the voltage required to fully deplete the multiplication layer of these sensors. The measurements were performed under different conditions in order to have a better understanding of the electric field inside the devices.
Using 120GeV pions at CERN SPS, the timing resolution and gain performance of heavily irradiated LGAD single pad diodes is evaluated. Samples were irradiated with thermal neutrons at JSI with fluences varying from 1e15 neq/cm2 to 6e15 neq/cm2. Single irradiated PIN samples were also included and presented for comparison. The voltage and temperature dependence of sample performance is presented...
The National Accelerator Center (CNA) is a user’s facility dedicated to multidisciplinary applications of particle accelerators. In this talk, the infrastructure available at CNA for Ion Irradiation and Characterization of Materials, based on a 3 MV tandem accelerator and a compact cyclotron for 18 MeV protons will be briefly described.
In addition, a new proposal in collaboration with IFCA...
We report the results from the latest test beam measurements of LGAD sensors performed at the Fermilab Test Beam Facility. Our studies focus on measurements of the signal efficiency, time resolution, as a function of position on the sensor, and performance of pixelated sensors. Additionally, we perform measurements of the signal efficiency and time resolution using irradiated LGAD sensors....
The radiation damage effects in thin (50 and 80 microns) LGADs produced by HPK were investigated. The devices with different doping of multiplication layer were studied after neutron irradiations by TCT and charge collection measurements. The results of these measurements will be presented together with comparison with similar CNM devices.
