Speaker
Igor Mandic
(Jozef Stefan Institute (SI))
Description
Results of E-TCT and Sr90 measurements with CMOS detectors produced by different foundries on p-type substrates with different initial resistivities will be presented. With Edge-TCT method the thickness of depleted layer of passive CMOS detectors was estimated and studied as a function of fluence. Collected charge deposited by MIPs from Sr90 source was measured with external amplifier. Collected charge measured with Sr90 will be compared with E-TCT measurements.
Author
Igor Mandic
(Jozef Stefan Institute (SI))
