Conveners
Defect and Material Engineering
- Michael Moll (CERN)
The standard technique to electrically isolate the $n^+$ implants of segmented silicon sensors fabricated on high-ohmic $p$-type silicon are $p^+$-implants.
Although the knowledge of the $p^+$-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors,this information is usually not available from the vendors, and methods to obtain it are highly...
The anneal induced transforms of radiation defects have been studied in n-type and p-type CZ and FZ Si. The samples were irradiated with high energy electrons (6.6 MeV), protons (26 GeV/c) and pions (300 MeV/c) by fluences up to 5×1016 cm−2. In order to identify the prevailing radiation defects and to trace their evolution during thermal treatments, measurements of...
The current-voltage characteristics of pad detectors made on high-resistivity FZ Si wafers and irradiated with 23-MeV protons are compared. The studies were performed using the detectors with the active region material of various properties: N-free, N-rich, and O-rich. The nitrogen was introduced during the growth of FZ Si crystal used for producing the substrate wafers. The oxygen was...
Measurements were made on the depletions voltages of pad diodes of different thickness and resistivity irradiated with protons and neutrons up to 7E15 $n_{eq}/cm^2$.
Two sets of diodes were used.
Epitaxial diodes with a thickness of 50 $\mu$m and different resistivities (10, 50, 250 and 1000 Ohm cm).
Float zone diodes with a resistivity of more than 10 kOhm cm with different thicknesses (100,...
The new NitroStrip p-on-n sensors were fabricated in CNM Barcelona within the RD50 collaboration on 4 different kinds of wafers: FZ, DOFZ, HR FZ Nitrogenated wafer and MCz. Here it will be shown electrical measurements without irradiation for some samples of those strip sensors.
