Conveners
Pixel and strip sensors
- Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))
The innermost tracking detector of the ATLAS experiment consists of planar n-in-n silicon pixel sensors. Closest to the beam pipe lays the insertable b-layer (IBL). Its pixels are arranged in a pitch of $250\,\mu m\,\times\,50\,\mu m$, with a rectangular shaped n-implant.
Based on this design six modified pixel designs have been developed in Dortmund.
The new pixel designs are arranged in...
Results obtained with recent productions of thin n-in-p pixel sensors designed at MPP will be presented. Sensors of 100 and 150 um thickness have been produced at CiS and HLL and were measured before and after interconnection to FE-I4 chips. A modified FE-I4 compatible sensor with a pixel size of 50x250um2 including smaller pixel implants of 50x50um2 was designed to derive prediction on the...
A promising approach for the future ATLAS pixel detector at the HL-LHC is the usage of 3D-silicon sensors for the inner layers and the utilization of commercial CMOS technologies for the sensors of the outer layers.
3D-silicon sensors (FBK, CNM) and planar 200/250 um thick n-in-n sensors (CiS) as used for ATLAS IBL, along with passive CMOS pixel sensors in 150 nm technology (LFoundry) were...
The radiation hardness of 3D pixel sensors with small pixel sizes of 50x50 and 25x100 µm² produced by CNM Barcelona is tested up to HL-LHC fluences. Since a readout chip with the desired pixel size is still under development by the RD53 collaboration, first prototype small-pitch pixel sensors were designed to be matched to the existing ATLAS IBL FE-I4 readout chip for testing. Irradiation...
Silicon pixels of area 25x100 and 50x50 square microns, fabricated at CNM using double sided 3D technology on 230 um thick wafers, are characterized using a Sr90 radioactive source and in a pion/proton test beam at the CERN SPS. Results are shown both for non-irradiated sensors and for sensors irradiated with protons at the CERN PS.
The new generation of 3D pixel sensors with small pixel sizes of 50x50 µm² developed for the HL-LHC upgrade are characterized using a Sr90 radioactive source: the results are shown for non-irradiated and irradiated sensors.
The LHCb VELO detector comprises of 88 silicon sensors, with two designs, one measuring the radial distance from the beam line and the other the azimuthal angle. The necessity to bring the signals for the radial measuring sensors to the edge of the detector requires an additional metal routing line layer. After operating the detector for a couple of years at the LHC effects were seen where the...
The ATLAS Irradiation Facility at the University of Birmingham uses 27 MeV protons from the MC40 cyclotron to irradiate samples for the HL-LHC upgrade. The facility is also a translational access facility within AIDA-2020 and irradiates a wide variety of samples from various experiments. The fluence delivered to the sample is normalised to a 1 MeV neutron equivalent fluence for comparison with...
We present our concept of using aluminum oxide deposited by atomic layer deposition (ALD) as field insulator and coupling dielectric in segmented n-in-p silicon detectors. As opposed to the commonly used SiO2, alumina thin films exhibit a significant negative charge, which enables us to omit the critical high-temperature p-spray/p-stop implantation steps. Furthermore, the dielectric constant...
