30th RD50 Workshop (Krakow)

Session

Transient current technique

6 Jun 2017, 09:00

Krakow

Conveners

Transient current technique

• Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

14. An extenision of Ramo's theorem include resistive elements

Werner Riegler (CERN)

06/06/2017, 09:00

With the introduction of resistive elements in the detector volumes, like for Restistive Plate Chambers or resistive MICROMEGAs, the signal induced on the readout electrodes will not only be determined by the movement of the primary charges but also by the movement of charges inside these resistive elements. This report will present an extension of Ramo's theorem to include these effects, that...

8. Two Photon Absorption TCT on HVCMOS, LGADs and pin diodes,

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

06/06/2017, 09:30

Edge-TPA measurements on neutron irradiated HVCMOS (CCPDv3, 7e15 neq/cm2) with improved setup and fresh LGADs and pin detectors will be presented. A first attempt to profile doping and electric field from data is envisaged.

34. Light absorption and charge collection of highly irradiated silicon sensors

Christian Scharf (Hamburg University (DE))

06/06/2017, 09:50

The absorption length of near-infrared light in radiation-damaged silicon has to be known to
calculate the deposited charge in irradiated sensors relative to non-irradiated reference sensors.This
is required in order to determine the charge collection efficiency CCE using the transient current
technique TCT. The absorption length has been determined as a function of the wavelength and...

44. Discussion

Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

06/06/2017, 10:10