30th RD50 Workshop (Krakow)

Session

Detectors with gain

6 Jun 2017, 11:10

Krakow

Conveners

Detectors with gain

• Amedeo Staiano (Universita e INFN Torino (IT))
• Roberta Arcidiacono (Universita e INFN Torino (IT))

13. Analytic expressions for time resolution of silicon pixel sensors

Werner Riegler (CERN)

06/06/2017, 11:10

Silicon sensors with high precision timing are used in present experiments, like the NA62 Gigatracker, or planned to be used for the LHC PhaseII upgrade, like the LGAD development. Trackers with 10um position and 10ps time resolution are quoted as a long term goal for these developments. This report will discuss analytic expressions for the time resolution of silicon sensors, with focus on the...

4. Measurements of the timing resolution of Ultra-Fast Silicon Detectors vs. Temperature, Fluence, Thickness, Manufacturer.

Hartmut Sadrozinski (University of California,Santa Cruz (US))

06/06/2017, 11:40

We report on the performance of UFSD (Ultra-Fast Silicon Detectors) from two vendors CNM (LGAD thickness 45um) and HPK (LGAD thickness 50 and 80um).
We have measured pre-rad and after neutron fluences of 6e14 and 2e15 n/cm^2 the leakage current, gain, time jitter, time resolution and the value of Landau fluctuations. The pre-rad measurements were performed at three temperatures (+20C, 0C,...

29. Laboratory measurement and progress in Low-Gain Avalanche Diodes

Valentina Sola (Universita e INFN Torino (IT)), Valentina Sola (Universita e INFN Torino (IT))

06/06/2017, 12:00

In this contribution we will review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors.
Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Diodes, which are silicon detectors with an internal multiplication mechanism so that they generate a signal...

25. Status of LGAD productions at CNM

Dr Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

06/06/2017, 12:20

This talk will report the status of simulations and fabrications of LGAD at CNM.

31. Study of Deep Diffused APDs for Timing Applications

Matteo Centis Vignali (CERN)

06/06/2017, 13:40

Deep diffused avalanche photodiodes (APD) are being studied as timing detectors for minimum ionizing particles.
In this talk, the first results and experiences in the operation of these devices are presented.

20. Initial studies of irradiated Ga doped LGADs

Gregor Kramberger (Jozef Stefan Institute (SI))

06/06/2017, 14:00

LGADs have been produced by CNM where Ga replaced B as a dopant in the multiplication layer in order to increase radiation hardness of LGADs. Although the devices exhibited early breakdown before irradiations they were fully functional after neutron irradiation. TCT and charge collection measurements with 90Sr were performed on devices irradiated up to the equivalent fluences of 6e15 cm-2....

23. Study of the onset of multiplication in proton irradiated LGADs

Sofia Otero Ugobono (CERN/Universidade de Santiago de Compostela (ES))

06/06/2017, 14:20

TCT and CV/IV measurements were performed on LGADs from CNM Run 7859 irradiated with protons up to 1E14 n$_{eq}$/cm$^2$. These studies were particularly focused on analysing the voltage required to fully deplete the multiplication layer of these sensors. The measurements were performed under different conditions in order to have a better understanding of the electric field inside the devices.

27. Timing performance and gain analysis of heavily irradiated LGAD diodes

Dr Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))

06/06/2017, 14:40

Using 120GeV pions at CERN SPS, the timing resolution and gain performance of heavily irradiated LGAD single pad diodes is evaluated. Samples were irradiated with thermal neutrons at JSI with fluences varying from 1e15 neq/cm2 to 6e15 neq/cm2. Single irradiated PIN samples were also included and presented for comparison. The voltage and temperature dependence of sample performance is presented...

32. Thin LGADs characterization using Ion Beam Induced Charge (IBIC) and Time-resolved IBIC at the Centro Nacional de Aceleradores

Dr Carmen JIMENEZ RAMOS (National Accelerator Center)

06/06/2017, 15:30

The National Accelerator Center (CNA) is a user’s facility dedicated to multidisciplinary applications of particle accelerators. In this talk, the infrastructure available at CNA for Ion Irradiation and Characterization of Materials, based on a 3 MV tandem accelerator and a compact cyclotron for 18 MeV protons will be briefly described.
In addition, a new proposal in collaboration with IFCA...

38. Beam test studies of the LGAD sensors at FNAL

Nicolo Cartiglia (Universita e INFN Torino (IT))

06/06/2017, 15:50

We report the results from the latest test beam measurements of LGAD sensors performed at the Fermilab Test Beam Facility. Our studies focus on measurements of the signal efficiency, time resolution, as a function of position on the sensor, and performance of pixelated sensors. Additionally, we perform measurements of the signal efficiency and time resolution using irradiated LGAD sensors....

21. Radiation damage in thin LGADs produced by HPK

Gregor Kramberger (Jozef Stefan Institute (SI))

06/06/2017, 16:10

The radiation damage effects in thin (50 and 80 microns) LGADs produced by HPK were investigated. The devices with different doping of multiplication layer were studied after neutron irradiations by TCT and charge collection measurements. The results of these measurements will be presented together with comparison with similar CNM devices.

45. Discussion

Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

06/06/2017, 16:30