30th RD50 Workshop (Krakow)

Session

CMOS

7 Jun 2017, 10:00

Krakow

Conveners

CMOS

• Eva Vilella Figueras (University of Liverpool (GB))

1. Charge collection properties of irradiated CMOS detectors

Igor Mandic (Jozef Stefan Institute (SI))

07/06/2017, 10:00

Results of E-TCT and Sr90 measurements with CMOS detectors produced by different foundries on p-type substrates with different initial resistivities will be presented. With Edge-TCT method the thickness of depleted layer of passive CMOS detectors was estimated and studied as a function of fluence. Collected charge deposited by MIPs from Sr90 source was measured with external amplifier....

30. Radiation hardness of a CMOS sensor process for a novel Depleted Monolithic Active Pixel Sensor

Bojan Hiti (Jozef Stefan Institute (SI))

07/06/2017, 10:20

Depleted active pixel sensors (DMAPS) are considered for use in outer layers of the upgraded ATLAS pixel detector at HL-LHC. In my talk I will present studies of radiation hardness of a novel low capacitance DMAPS produced by TowerJazz in a 180 nm CMOS process. Charge collection takes place in a high resistivity epitaxial layer, which can be fully depleted even after irradiation. Sensors...

24. HV-CMOS testing and design

Emanuele Cavallaro (IFAE - Barcelona (ES))

07/06/2017, 11:10

The ATLAS collaboration is studying the possibility to install HV-CMOS devices in the outermost layer of the upgraded pixel detector of the ATLAS ITk for HL-HLC.
For this purpose different technologies are being investigated and different prototypes have already been produced and tested.
IFAE is participating both in design and testing of HV-CMOS devices.
Beam test results of the monolithic...

22. Recent progress of the RD50 collaboration towards an R&D HV-CMOS submission in the 150 nm node from LFoundry

Eva Vilella Figueras (University of Liverpool (GB))

07/06/2017, 11:30

Due to their capability to integrate the readout electronics on the sensor substrate while providing fast charge collection by drift and high radiation tolerance levels of 10E15 neq/cm2, High Voltage-CMOS (HV-CMOS) detectors are being developed for their use or potential use in particle physics applications such as the Mu3e experiment, the ATLAS ITk upgrade and CLIC. Despite their fast charge...

47. Discussion

Eva Vilella Figueras (University of Liverpool (GB))

07/06/2017, 11:50