Login

15th RD50 Workshop

16–18 Nov 2009
CERN
Europe/Zurich timezone

Support

Contribution List

41 out of 41 displayed
Export to PDF
  1. 14. Welcome to the 15th RD50 Workshop
    Michael Moll (CERN)
    16/11/2009, 13:30
  2. 15. The ATLAS Insertable B-Layer (IBL)
    Heinz Pernegger (CERN)
    16/11/2009, 13:45
  3. 16. A low mass 4 layer pixel system for CMS
    Dr Hans-Christian Kaestli (PSI)
    16/11/2009, 14:15
  4. 26. The comparison of the defect generation during the proton irradiation in situ and afterwards in silicon
    Prof. Juozas Vaitkus (Vilnius University)
    16/11/2009, 14:45
    It was performed the measurement of the photoconductivity decay in MCZ silicon during the irradiation by protons in Helsinki Acellerator Laboratory. It was found the difference of defect generation in the "fresh" samples in comparison with the preirradiated samples. The main difference was observed in the low irradiation region and becomes similar at high fluences, except of the cases of the...
    Go to contribution page
  5. 11. INTERSTITIAL DEFECT REACTIONS IN P-TYPE SILICON IRRADIATED AT DIFFERENT TEMPERATURES
    Dr Leonid Makarenko (Belarusian State University)
    16/11/2009, 15:05
    In this work we present some new findings on the formation and annealing behavior of radiation-induced defects of interstitial type in p-silicon irradiated with 6 MeV electrons and alpha-particles of Pu-239 at temperatures of 78 K (LNT) and 273-295 K (RT). The samples studied were n+-p structures with a hole concentration in the base region from about 3×10^12 cm^-3 to 6×10^14 cm^-3. The low...
    Go to contribution page
  6. 27. The deep levels in the irradiated Si (WODEAN samples)
    Prof. Juozas Vaitkus (Vilnius University)
    16/11/2009, 15:55
    A few WODEAN series samples were investigated by extrisic photoconductivity spectrum analyze using the upgraded equipment. More precise data are presented. Measurements were performed at different temperatures. The slow photoconductivity decay components were measured at different excitation conditions.
    Go to contribution page
  7. 21. Microscopic Study of Proton Irradiated Epitaxial Detectors
    Volodymyr Khomenkov (Hamburg University)
    16/11/2009, 16:15
    Thick epitaxial material (e.g. 150 um) may be an option for application in S-LHC, therefore we are interested in the microscopic defect generation and the macroscopic parameters of this material. DLTS and TSC study of n-type pad diodes with thicknesses up to 150 um have been performed after irradiation with 23 GeV protons and following isochronal annealing. A correlation between macroscopic...
    Go to contribution page
  8. 28. Generation of a shallow donor after 6, 15 and 900 MeV electron irradiation
    alexandra junkes (Hamburg University)
    16/11/2009, 16:35
    This work focuses on the generation of the shallow donor level E30K after 6, 15 and 900 MeV electron irradiation in n-type FZ diodes. The E30K is known to be a cluster related defect which plays a key role in the understanding of non-type inversion of epitaxial diodes after high proton fluences. We found that the generation of E30K is suppressed for increasing electron energies. This suggests...
    Go to contribution page
  9. 33. TSC studies on n- and p-type MCZ Si pad detectors irradiated with neutrons up to 10^16 n/cm^2
    Monica Scaringella (University of Florence)
    16/11/2009, 16:55
    We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents technique. Detectors have been irradiated with fast neutrons in the range 10^14-10^16 n/cm2. Temperatures spanned from 10K to 250K to investigate the presence of both shallow and deep traps in the...
    Go to contribution page
  10. 29. Discussion: Wodean & Defect Characterization
    16/11/2009, 17:15
  11. 7. Mixed irradiation studies with magnetic czochralski diodes
    Robert Eber (IEKP, KIT)
    17/11/2009, 09:15
    TCT measurements with magnetic czochralski diodes (n-in-p and p-in-n) after a mixed irradiation with protons und neutrons at five different fluences above 3*10^(14)/cm^2 were performed. Annealing studies are ongoing. Trapping times for the lower irradiated diodes could be extracted. The electric field inside the diode at different voltages was simulated and reconstructed from the TCT-Signal.
    Go to contribution page
  12. 17. Results on diodes
    Katharina Kaska (Technische Universitaet Wien)
    17/11/2009, 09:35
    Results on diodes
    Go to contribution page
  13. 22. Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron Irradiation
    Mr Thomas Poehlsen (University of Hamburg)
    17/11/2009, 09:55
    The charge collection and the trapping behaviour of 150 µm n-type epitaxial silicon detectors irradiated with neutron fluences between 1E15 and 4E15 cm-2 were investigated. Observed double peaks in the TCT signal could be simulated assuming parabolic electric fields. Contrary to previous assumptions of field independent trapping time constants the field dependence was studied. The experimental...
    Go to contribution page
  14. 25. CCE in irradiated silicon detectors with a consideration of avalanche effect
    Dr Vladimir Eremin (Ioffe Physical-Technical Institute RAS)
    17/11/2009, 10:15
    The results of modeling of CCE vs. fluence and CCE vs. voltage dependences in a wide range of fluences and bias voltage are presented. The shape of the curves is discussed in the frame of PTI model for avalanche multiplication in p-n junctions on deep level rich semiconductors.
    Go to contribution page
  15. 12. Detailed investigation of charge multiplication properties in highly irradiated thin epitaxial silicon diodes
    Jörn Lange (University of Hamburg)
    17/11/2009, 11:05
    Recently, charge multiplication has been observed in charge collection measurements of highly irradiated (i.e. several 1e15 to 1e16 n/cm²) 75, 100 and 150 µm thin epitaxial silicon diodes. CCE results for different sources (670, 830, 1060 nm laser light and 5.8 MeV alpha particles with different absorber layers between source and diode) will be presented and compared to theoretical...
    Go to contribution page
  16. 2. Investigation of electric field and charge multiplication in irradiated silicon detectors by Edge-TCT
    Gregor Kramberger (Jozef Stefan Institute)
    17/11/2009, 11:25
    A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 um was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. The pulse shapes were analysed in a...
    Go to contribution page
  17. 10. Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors
    Marko MILOVANOVIĆ (Jozef Stefan Institute, Ljubljana)
    17/11/2009, 11:45
    Electric field and charge collection properties of a n+-p strip detector irradiated to 5e15 cm-2 were investigated by Edge-TCT (E-TCT) during long term annealing. It was found that charge collection improves with time, due to larger avalanche multiplication. On the other hand, when operated under forward bias, charge collection properties of the detector were not affected by the annealing process.
    Go to contribution page
  18. 39. Recent results of annealing measurements in p-type microstrip detector with SCT128 chip (Late submission)
    Igor Mandic (University of Ljubljana)
    17/11/2009, 12:00
  19. 30. Discussion: Pad Detectors and Charge Multiplication
    17/11/2009, 12:15
  20. 23. First Results of SiBT test beam 2009
    Jaakko Haerkoenen (Helsinki Institute of Physics HIP)
    17/11/2009, 14:00
    This talk gives preliminary results obtained from test beam experiment performed in 29. June-12.July 2009 at CERN H2 area with Silicon Beam Telescope (SiBT). The SiBT is based on CMS Tracker readout electronics and data acquisition sysmten, and the telescope consists of up to eight reference silicon microstrip modules and slots for two test modules. The sensors used in this study have been...
    Go to contribution page
  21. 24. Interstrip resistance in silicon position-sensitive detectors
    Dr Elena Verbitskaya (Ioffe Physical-Technical Inst. RAS)
    17/11/2009, 14:20
    Results on interstrip isolation resistance in Si position-sensitive detectors are presented. It is demonstrated that experimental I-V characteristics of the interstrip gap show a step in the current. This feature is caused by the current redistribution between neighboring strips and its influence on the interstrip resistance is more pronounced than ohmic conductance between the strips.
    Go to contribution page
  22. 1. Charge collection annealing study of p-in-n silicon microstrip detectors
    Craig Wiglesworth (Department of Physics)
    17/11/2009, 14:40
    The annealling of the charge collection as a function of the RT equivalent time (CCET) is now well established with n-side readout sensors. It is though less known with p-in-n sensors. Results of CCET measurements with this type of detectors irradiated to the dose anticipated for the inner microstrip layer of the present ATLAS SCT are here presented. The results are discussed in view of...
    Go to contribution page
  23. 3. Annealing of Charge Collection Efficiency in highly irradiated MCz-n strip detectors.
    Mr Nicola Pacifico (CERN & Universita degli Studi di Bari)
    17/11/2009, 15:00
    MCz p-readout strip detectors, irradiated to sLHC foreseen fluences, were characterized through Charge Collection Efficiency (CCE) measurements at different isothermal annealing steps. Though n-readout detectors have shown so far remarkable CCE performances, engineering issues (e.g. strip insulation) make them a less reliable alternative to n-readout sensors. The results of this study are...
    Go to contribution page
  24. 4. Surface properties of ATLAS n-on-p sensors
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    17/11/2009, 15:20
    Date on Rint, Cint, Punc-through pre-rad and post rad from the ATLAS07 test sensors (HPK) will be presented
    Go to contribution page
  25. 38. Full-size ATLAS Sensor Testing (Late submission)
    Jan Bohm (Institute of Physics)
    17/11/2009, 16:10
  26. 31. Discussion on Strip Sensors (FDS)
    17/11/2009, 16:30
  27. 19. Alibava System Hardware
    Ricardo Marco Hernandez (Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)
    17/11/2009, 16:50
    A short description of all the Alibava system hardware including both the MB and the DB.
    Go to contribution page
  28. 20. Alibava - a discussion on Software and FAQ
    Henry Brown (University of Liverpool)
    17/11/2009, 17:10
    A brief discussion on known issues with the Alibava system, the most commonly asked questions/complaints about the system, and the macros developed in Liverpool out of our own requirements that are available on the internet.
    Go to contribution page
  29. 18. Status of the CERN ALIBAVA system
    Eduardo Del Castillo Sanchez (CERN)
    17/11/2009, 17:30
    First experiences with the hard and software will be presented.
    Go to contribution page
  30. 6. Status of the Freiburg ALIBAVA systems on the laser and beta setups
    Michael Breindl (Freiburg University)
    17/11/2009, 17:50
    There are two setups in Freiburg with the new ALIBAVA system as a replacement for the binary ATLAS SCT DAQ for testing silicon strip detectors (planar and 3D detectors). The first setup is a beta setup with a radioactive source (Sr90) for charge collection efficiency measurements and the second one is a laser setup with an infrared pulsed PicoQuanT laser to investigate the space-resolved...
    Go to contribution page
  31. 37. Status of the Glasgow Alibava system
    17/11/2009, 18:10
  32. 34. New Measurement of Lorentz angles for electrons and holes in silicon detectors
    Mike Schmanau (IEKP-KIT-Germany)
    18/11/2009, 09:15
    Silicon sensors are commonly used in particle trackers because of their stability and high spatial resolution in the um range. Inside a strong magnetic field the ionization is not entering on the electrode hit by the particle, but shifted to neighboring electrodes because of the Lorentz force in crossed E and B fields, which lets the ionization drift under a certain angle. This Lorentz...
    Go to contribution page
  33. 8. New Detectrors with Novel Electrode Configurations for Applications in sLHC and Photon Sciences
    Zheng Li (BNL)
    18/11/2009, 09:35
    Concept, simulations, and design of the US patent-pending new detectors with novel electrode configurations will be presented. These detectors can be ultral radiation hard for applications in extremely high radiation environment such as sLHC, and for applications in photon sciences.
    Go to contribution page
  34. 5. Measurements of 3D/FBK sensors
    Alessandro La Rosa (CERN)
    18/11/2009, 09:55
    3D-Si sensors fabricated at FBK-irst with the Double-side Double Type Column approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.4 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. We'll present leakage current and noise measurements, results of functional tests with gamma-ray sources, charge collection tests with...
    Go to contribution page
  35. 13. Results of Beam Test Measurements with 3D-DDTC Silicon Strip Detectors
    Michael Koehler (Freiburg University)
    18/11/2009, 10:15
    Detectors in the 3D-DDTC (double-sided double type column) layout combine the intrinsically radiation hard design of 3D detectors with a simplified processing technology. This talk presents results of 3D-DDTC detectors obtained in beam test measurements with high-energy particles at the CERN SPS. The Silicon Beam Telescope (SiBT), provided by the University of Helsinki, was utilised to measure...
    Go to contribution page
  36. 9. Simulations of guard ring designs for n-on-p sensors and of 3D detectors
    Daniela Bortoletto (Purdue University)
    18/11/2009, 11:05
    Electrical simulations have been performed with the Synopsys Sentaurus TCAD to develop a guard ring structure that minimizes the electric field throughout the periphery of an n-on-p silicon particle detector. The behavior of the breakdown voltage has been studied as the function of the radiation fluence, the field plate length, and the oxide thickness. Preliminary results of the performance...
    Go to contribution page
  37. 35. Charge collection studies of irradiated 3D detectors (Late submission)
    Richard Bates (Department of Physics and Astronomy)
    18/11/2009, 11:25
    Short strip CNM double-sided 3D sensors have been fabricated and irradiated in a 26MeV proton beam. The devices have received a fluence up to 2x10^16 1 MeV neutron equivalent cm-2. The devices have been tested using the Alibava system with a Sr-90 source. Results of the excellent charge collection of the devices after such high fluences are shown.
    Go to contribution page
  38. 36. Beam tests of Medipix2/Timepix double-sided 3D detectors (Late submission)
    Mr Marco Gersabeck (University of Glasgow)
    18/11/2009, 11:45
    CNM double-sided 3D pixel detectors have been fabricated and assembled to the Medipix2 and Timepix ASICs. Medipix2 assemblies have been tested with a micron-sized beam at the Diamond light source to understand the response of the detector as a function of hit position. The same devices and Timepix assemblies have also been tested in a telescope at a pion beam at the SRS. Complimentary...
    Go to contribution page
  39. 32. Discussion on Pixel, 3D and new structures
    18/11/2009, 12:05
  40. 40. Production of RD50 sensors at MICRON
    18/11/2009, 14:30
  41. 41. Production of RD50 sensors at VTT
    18/11/2009, 15:00