Heinz Pernegger
(CERN)
16/11/2009, 13:45
Dr
Hans-Christian Kaestli
(PSI)
16/11/2009, 14:15
Prof.
Juozas Vaitkus
(Vilnius University)
16/11/2009, 14:45
It was performed the measurement of the photoconductivity decay in MCZ silicon during the irradiation by protons in Helsinki Acellerator Laboratory. It was found the difference of defect generation in the "fresh" samples in comparison with the preirradiated samples. The main difference was observed in the low irradiation region and becomes similar at high fluences, except of the cases of the...
Dr
Leonid Makarenko
(Belarusian State University)
16/11/2009, 15:05
In this work we present some new findings on the formation and annealing behavior of radiation-induced defects of interstitial type in p-silicon irradiated with 6 MeV electrons and alpha-particles of Pu-239 at temperatures of 78 K (LNT) and 273-295 K (RT). The samples studied were n+-p structures with a hole concentration in the base region from about 3×10^12 cm^-3 to 6×10^14 cm^-3. The low...
Prof.
Juozas Vaitkus
(Vilnius University)
16/11/2009, 15:55
A few WODEAN series samples were investigated by extrisic photoconductivity spectrum analyze using the upgraded equipment. More precise data are presented. Measurements were performed at different temperatures.
The slow photoconductivity decay components were measured at different excitation conditions.
Volodymyr Khomenkov
(Hamburg University)
16/11/2009, 16:15
Thick epitaxial material (e.g. 150 um) may be an option for application in S-LHC, therefore we are interested in the microscopic defect generation and the macroscopic parameters of this material.
DLTS and TSC study of n-type pad diodes with thicknesses up to 150 um have been performed after irradiation with 23 GeV protons and following isochronal annealing. A correlation between macroscopic...
alexandra junkes
(Hamburg University)
16/11/2009, 16:35
This work focuses on the generation of the shallow donor level E30K after 6, 15 and 900 MeV electron irradiation in n-type FZ diodes. The E30K is known to be a cluster related defect which plays a key role in the understanding of non-type inversion of epitaxial diodes after high proton fluences. We found that the generation of E30K is suppressed for increasing electron energies. This suggests...
Monica Scaringella
(University of Florence)
16/11/2009, 16:55
We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents technique. Detectors have been irradiated with fast neutrons in the range 10^14-10^16 n/cm2. Temperatures spanned from 10K to 250K to investigate the presence of both shallow and deep traps in the...
Mr
Thomas Poehlsen
(University of Hamburg)
17/11/2009, 09:55
The charge collection and the trapping behaviour of 150 µm n-type epitaxial silicon detectors irradiated with neutron fluences between 1E15 and 4E15 cm-2 were investigated. Observed double peaks in the TCT signal could be simulated assuming parabolic electric fields. Contrary to previous assumptions of field independent trapping time constants the field dependence was studied. The experimental...
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute RAS)
17/11/2009, 10:15
The results of modeling of CCE vs. fluence and CCE vs. voltage dependences in a wide range of fluences and bias voltage are presented. The shape of the curves is discussed in the frame of PTI model for avalanche multiplication in p-n junctions on deep level rich semiconductors.
Jörn Lange
(University of Hamburg)
17/11/2009, 11:05
Recently, charge multiplication has been observed in charge collection measurements of highly irradiated (i.e. several 1e15 to 1e16 n/cm²) 75, 100 and 150 µm thin epitaxial silicon diodes. CCE results for different sources (670, 830, 1060 nm laser light and 5.8 MeV alpha particles with different absorber layers between source and diode) will be presented and compared to theoretical...
Gregor Kramberger
(Jozef Stefan Institute)
17/11/2009, 11:25
A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 um was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. The pulse shapes were analysed in a...
Marko MILOVANOVIĆ
(Jozef Stefan Institute, Ljubljana)
17/11/2009, 11:45
Electric field and charge collection properties of a n+-p strip detector irradiated to 5e15 cm-2 were investigated by Edge-TCT (E-TCT) during long term annealing.
It was found that charge collection improves with time, due to larger avalanche multiplication. On the other hand, when operated under forward bias, charge collection properties of the detector were not affected by the annealing process.
Igor Mandic
(University of Ljubljana)
17/11/2009, 12:00
17/11/2009, 12:15
Jaakko Haerkoenen
(Helsinki Institute of Physics HIP)
17/11/2009, 14:00
This talk gives preliminary results obtained from test beam experiment performed in 29. June-12.July 2009 at CERN H2 area with Silicon Beam Telescope (SiBT). The SiBT is based on CMS Tracker readout electronics and data acquisition sysmten, and the telescope consists of up to eight reference silicon microstrip modules and slots for two test modules.
The sensors used in this study have been...
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Inst. RAS)
17/11/2009, 14:20
Results on interstrip isolation resistance in Si position-sensitive detectors are presented. It is demonstrated that experimental I-V characteristics of the interstrip gap show a step in the current. This feature is caused by the current redistribution between neighboring strips and its influence on the interstrip resistance is more pronounced than ohmic conductance between the strips.
Craig Wiglesworth
(Department of Physics)
17/11/2009, 14:40
The annealling of the charge collection as a function of the RT equivalent time (CCET) is now well established with n-side readout sensors. It is though less known with p-in-n sensors. Results of CCET measurements with this type of detectors irradiated to the dose anticipated for the inner microstrip layer of the present ATLAS SCT are here presented. The results are discussed in view of...
Mr
Nicola Pacifico
(CERN & Universita degli Studi di Bari)
17/11/2009, 15:00
MCz p-readout strip detectors, irradiated to sLHC foreseen fluences, were characterized through Charge Collection Efficiency (CCE) measurements at different isothermal annealing steps. Though n-readout detectors have shown so far remarkable CCE performances, engineering issues (e.g. strip insulation) make them a less reliable alternative to n-readout sensors. The results of this study are...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
17/11/2009, 15:20
Date on Rint, Cint, Punc-through pre-rad and post rad from the ATLAS07 test sensors (HPK) will be presented
Jan Bohm
(Institute of Physics)
17/11/2009, 16:10
Ricardo Marco Hernandez
(Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)
17/11/2009, 16:50
A short description of all the Alibava system hardware including both the MB and the DB.
Henry Brown
(University of Liverpool)
17/11/2009, 17:10
A brief discussion on known issues with the Alibava system, the most commonly asked questions/complaints about the system, and the macros developed in Liverpool out of our own requirements that are available on the internet.
Eduardo Del Castillo Sanchez
(CERN)
17/11/2009, 17:30
First experiences with the hard and software will be presented.
Michael Breindl
(Freiburg University)
17/11/2009, 17:50
There are two setups in Freiburg with the new ALIBAVA system as a
replacement for the binary ATLAS SCT DAQ for
testing silicon strip detectors (planar and 3D detectors). The first setup
is a beta setup with a radioactive source (Sr90) for charge collection
efficiency measurements and the second one is a laser setup with an
infrared pulsed PicoQuanT laser to investigate the space-resolved...
Mike Schmanau
(IEKP-KIT-Germany)
18/11/2009, 09:15
Silicon sensors are commonly used in particle trackers because of their stability
and high spatial resolution in the um range. Inside a strong magnetic field the
ionization is not entering on the electrode hit by the particle, but shifted to
neighboring electrodes because of the Lorentz force in crossed E and B fields,
which lets the ionization drift under a certain angle. This Lorentz...
Zheng Li
(BNL)
18/11/2009, 09:35
Concept, simulations, and design of the US patent-pending new detectors with novel electrode configurations will be presented. These detectors can be ultral radiation hard for applications in extremely high radiation environment such as sLHC, and for applications in photon sciences.
Alessandro La Rosa
(CERN)
18/11/2009, 09:55
3D-Si sensors fabricated at FBK-irst with the Double-side Double Type Column approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.4 Tesla magnetic field with a 180 GeV pion beam at CERN SPS.
We'll present leakage current and noise measurements, results of functional tests with gamma-ray sources, charge collection tests with...
Michael Koehler
(Freiburg University)
18/11/2009, 10:15
Detectors in the 3D-DDTC (double-sided double type column) layout combine the intrinsically radiation hard design of 3D detectors with a simplified processing technology. This talk presents results of 3D-DDTC detectors obtained in beam test measurements with high-energy particles at the CERN SPS. The Silicon Beam Telescope (SiBT), provided by the University of Helsinki, was utilised to measure...
Daniela Bortoletto
(Purdue University)
18/11/2009, 11:05
Electrical simulations have been performed with the Synopsys Sentaurus TCAD to develop a guard ring structure that minimizes the electric field throughout the periphery of an n-on-p silicon particle detector. The behavior of the breakdown voltage has been studied as the function of the radiation fluence, the field plate length, and the oxide thickness.
Preliminary results of the performance...
Richard Bates
(Department of Physics and Astronomy)
18/11/2009, 11:25
Short strip CNM double-sided 3D sensors have been fabricated and irradiated in a 26MeV proton beam. The devices have received a fluence up to 2x10^16 1 MeV neutron equivalent cm-2. The devices have been tested using the Alibava system with a Sr-90 source. Results of the excellent charge collection of the devices after such high fluences are shown.
Mr
Marco Gersabeck
(University of Glasgow)
18/11/2009, 11:45
CNM double-sided 3D pixel detectors have been fabricated and assembled to the Medipix2 and Timepix ASICs. Medipix2 assemblies have been tested with a micron-sized beam at the Diamond light source to understand the response of the detector as a function of hit position. The same devices and Timepix assemblies have also been tested in a telescope at a pion beam at the SRS. Complimentary...
18/11/2009, 12:05
18/11/2009, 14:30
