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15th RD50 Workshop

16–18 Nov 2009

CERN

Europe/Zurich timezone

Support

michael.moll@cern.ch

Speaker List

Richard Bates (Department of Physics and Astronomy)
- Speaker at Charge collection studies of irradiated 3D detectors (Late submission)
Jan Bohm (Institute of Physics)
- Speaker at Full-size ATLAS Sensor Testing (Late submission)
Daniela Bortoletto (Purdue University)
- Speaker at Simulations of guard ring designs for n-on-p sensors and of 3D detectors
Michael Breindl (Freiburg University)
- Speaker at Status of the Freiburg ALIBAVA systems on the laser and beta setups
Henry Brown (University of Liverpool)
- Speaker at Alibava - a discussion on Software and FAQ
Eduardo Del Castillo Sanchez (CERN)
- Speaker at Status of the CERN ALIBAVA system
Robert Eber (IEKP, KIT)
- Speaker at Mixed irradiation studies with magnetic czochralski diodes
Vladimir Eremin (Ioffe Physical-Technical Institute RAS)
- Speaker at CCE in irradiated silicon detectors with a consideration of avalanche effect
Marco Gersabeck (University of Glasgow)
- Speaker at Beam tests of Medipix2/Timepix double-sided 3D detectors (Late submission)
Jaakko Haerkoenen (Helsinki Institute of Physics HIP)
- Speaker at First Results of SiBT test beam 2009
alexandra junkes (Hamburg University)
- Speaker at Generation of a shallow donor after 6, 15 and 900 MeV electron irradiation
Hans-Christian Kaestli (PSI)
- Speaker at A low mass 4 layer pixel system for CMS
Katharina Kaska (Technische Universitaet Wien)
- Speaker at Results on diodes
Volodymyr Khomenkov (Hamburg University)
- Speaker at Microscopic Study of Proton Irradiated Epitaxial Detectors
Michael Koehler (Freiburg University)
- Speaker at Results of Beam Test Measurements with 3D-DDTC Silicon Strip Detectors
Gregor Kramberger (Jozef Stefan Institute)
- Speaker at Investigation of electric field and charge multiplication in irradiated silicon detectors by Edge-TCT
Jörn Lange (University of Hamburg)
- Speaker at Detailed investigation of charge multiplication properties in highly irradiated thin epitaxial silicon diodes
Alessandro La Rosa (CERN)
- Speaker at Measurements of 3D/FBK sensors
Zheng Li (BNL)
- Speaker at New Detectrors with Novel Electrode Configurations for Applications in sLHC and Photon Sciences
Leonid Makarenko (Belarusian State University)
- Speaker at INTERSTITIAL DEFECT REACTIONS IN P-TYPE SILICON IRRADIATED AT DIFFERENT TEMPERATURES
Igor MANDIĆ (Jozef Stefan Institute, Ljubljana)
- Speaker at Recent results of annealing measurements in p-type microstrip detector with SCT128 chip (Late submission)
Ricardo Marco Hernandez (Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)
- Speaker at Alibava System Hardware
Marko MILOVANOVIĆ (Jozef Stefan Institute, Ljubljana)
- Speaker at Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors
Michael Moll (CERN)
- Speaker at Welcome to the 15th RD50 Workshop
Nicola Pacifico (CERN & Universita degli Studi di Bari)
- Speaker at Annealing of Charge Collection Efficiency in highly irradiated MCz-n strip detectors.
Heinz Pernegger (CERN)
- Speaker at The ATLAS Insertable B-Layer (IBL)
Thomas Poehlsen (University of Hamburg)
- Speaker at Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron Irradiation
Hartmut Sadrozinski (SCIPP, UC santa Cruz)
- Speaker at Surface properties of ATLAS n-on-p sensors
Monica Scaringella (University of Florence)
- Speaker at TSC studies on n- and p-type MCZ Si pad detectors irradiated with neutrons up to 10^16 n/cm^2
Mike Schmanau (IEKP-KIT-Germany)
- Speaker at New Measurement of Lorentz angles for electrons and holes in silicon detectors
Juozas Vaitkus (Vilnius University)
- Speaker at The comparison of the defect generation during the proton irradiation in situ and afterwards in silicon
- Speaker at The deep levels in the irradiated Si (WODEAN samples)
Elena Verbitskaya (Ioffe Physical-Technical Inst. RAS)
- Speaker at Interstrip resistance in silicon position-sensitive detectors
Craig Wiglesworth (Department of Physics)
- Speaker at Charge collection annealing study of p-in-n silicon microstrip detectors