16–18 Nov 2009
CERN
Europe/Zurich timezone

Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron Irradiation

17 Nov 2009, 09:55
20m
TE Auditorium (CERN)

TE Auditorium

CERN

Speaker

Mr Thomas Poehlsen (University of Hamburg)

Description

The charge collection and the trapping behaviour of 150 µm n-type epitaxial silicon detectors irradiated with neutron fluences between 1E15 and 4E15 cm-2 were investigated. Observed double peaks in the TCT signal could be simulated assuming parabolic electric fields. Contrary to previous assumptions of field independent trapping time constants the field dependence was studied. The experimental results and simulations will be presented and discussed

Author

Mr Thomas Poehlsen (University of Hamburg)

Co-authors

Dr Eckhart Fretwurst (University of Hamburg) Joern Lange (University of Hamburg) Mr Julian Becker (University of Hamburg) Prof. Robert Klanner (University of Hamburg)

Presentation materials