Speaker
alexandra junkes
(Hamburg University)
Description
This work focuses on the generation of the shallow donor level E30K after 6, 15 and 900 MeV electron irradiation in n-type FZ diodes. The E30K is known to be a cluster related defect which plays a key role in the understanding of non-type inversion of epitaxial diodes after high proton fluences. We found that the generation of E30K is suppressed for increasing electron energies. This suggests a more point like character of the defect.
Defect concentrations were obtained by means of thermally stimulated current technique for several electron fluences.
Author
alexandra junkes
(Hamburg University)
Co-authors
Mr
Eckhart Fretwurst
(Hamburg University)
Mr
Gunnar Lindström
(Hamburg University)
Mrs
Ioana Pintilie
(NIMP, Bucharest-Margurele)
