Prof.
Juozas Vaitkus
(Vilnius University)
16/11/2009, 14:45
It was performed the measurement of the photoconductivity decay in MCZ silicon during the irradiation by protons in Helsinki Acellerator Laboratory. It was found the difference of defect generation in the "fresh" samples in comparison with the preirradiated samples. The main difference was observed in the low irradiation region and becomes similar at high fluences, except of the cases of the...
Dr
Leonid Makarenko
(Belarusian State University)
16/11/2009, 15:05
In this work we present some new findings on the formation and annealing behavior of radiation-induced defects of interstitial type in p-silicon irradiated with 6 MeV electrons and alpha-particles of Pu-239 at temperatures of 78 K (LNT) and 273-295 K (RT). The samples studied were n+-p structures with a hole concentration in the base region from about 3×10^12 cm^-3 to 6×10^14 cm^-3. The low...
Prof.
Juozas Vaitkus
(Vilnius University)
16/11/2009, 15:55
A few WODEAN series samples were investigated by extrisic photoconductivity spectrum analyze using the upgraded equipment. More precise data are presented. Measurements were performed at different temperatures.
The slow photoconductivity decay components were measured at different excitation conditions.
Volodymyr Khomenkov
(Hamburg University)
16/11/2009, 16:15
Thick epitaxial material (e.g. 150 um) may be an option for application in S-LHC, therefore we are interested in the microscopic defect generation and the macroscopic parameters of this material.
DLTS and TSC study of n-type pad diodes with thicknesses up to 150 um have been performed after irradiation with 23 GeV protons and following isochronal annealing. A correlation between macroscopic...
alexandra junkes
(Hamburg University)
16/11/2009, 16:35
This work focuses on the generation of the shallow donor level E30K after 6, 15 and 900 MeV electron irradiation in n-type FZ diodes. The E30K is known to be a cluster related defect which plays a key role in the understanding of non-type inversion of epitaxial diodes after high proton fluences. We found that the generation of E30K is suppressed for increasing electron energies. This suggests...
Monica Scaringella
(University of Florence)
16/11/2009, 16:55
We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents technique. Detectors have been irradiated with fast neutrons in the range 10^14-10^16 n/cm2. Temperatures spanned from 10K to 250K to investigate the presence of both shallow and deep traps in the...
