15th RD50 Workshop

Session

Pad Detector Characterization & Studies on Charge Multiplication

17 Nov 2009, 09:15

TE Auditorium (CERN)

7. Mixed irradiation studies with magnetic czochralski diodes

Robert Eber (IEKP, KIT)

17/11/2009, 09:15

TCT measurements with magnetic czochralski diodes (n-in-p and p-in-n) after a mixed irradiation with protons und neutrons at five different fluences above 3*10^(14)/cm^2 were performed. Annealing studies are ongoing. Trapping times for the lower irradiated diodes could be extracted. The electric field inside the diode at different voltages was simulated and reconstructed from the TCT-Signal.

17. Results on diodes

Katharina Kaska (Technische Universitaet Wien)

17/11/2009, 09:35

Results on diodes

22. Charge Collection and Trapping in Epitaxial Silicon Detectors after Neutron Irradiation

Mr Thomas Poehlsen (University of Hamburg)

17/11/2009, 09:55

The charge collection and the trapping behaviour of 150 µm n-type epitaxial silicon detectors irradiated with neutron fluences between 1E15 and 4E15 cm-2 were investigated. Observed double peaks in the TCT signal could be simulated assuming parabolic electric fields. Contrary to previous assumptions of field independent trapping time constants the field dependence was studied. The experimental...

25. CCE in irradiated silicon detectors with a consideration of avalanche effect

Dr Vladimir Eremin (Ioffe Physical-Technical Institute RAS)

17/11/2009, 10:15

The results of modeling of CCE vs. fluence and CCE vs. voltage dependences in a wide range of fluences and bias voltage are presented. The shape of the curves is discussed in the frame of PTI model for avalanche multiplication in p-n junctions on deep level rich semiconductors.

12. Detailed investigation of charge multiplication properties in highly irradiated thin epitaxial silicon diodes

Jörn Lange (University of Hamburg)

17/11/2009, 11:05

Recently, charge multiplication has been observed in charge collection measurements of highly irradiated (i.e. several 1e15 to 1e16 n/cm²) 75, 100 and 150 µm thin epitaxial silicon diodes. CCE results for different sources (670, 830, 1060 nm laser light and 5.8 MeV alpha particles with different absorber layers between source and diode) will be presented and compared to theoretical...

2. Investigation of electric field and charge multiplication in irradiated silicon detectors by Edge-TCT

Gregor Kramberger (Jozef Stefan Institute)

17/11/2009, 11:25

A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 um was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. The pulse shapes were analysed in a...

10. Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors

Marko MILOVANOVIĆ (Jozef Stefan Institute, Ljubljana)

17/11/2009, 11:45

Electric field and charge collection properties of a n+-p strip detector irradiated to 5e15 cm-2 were investigated by Edge-TCT (E-TCT) during long term annealing. It was found that charge collection improves with time, due to larger avalanche multiplication. On the other hand, when operated under forward bias, charge collection properties of the detector were not affected by the annealing process.

39. Recent results of annealing measurements in p-type microstrip detector with SCT128 chip (Late submission)

Igor Mandic (University of Ljubljana)

17/11/2009, 12:00

30. Discussion: Pad Detectors and Charge Multiplication

17/11/2009, 12:15