Speaker
Prof.
ABDENOUR LOUNIS
(LAL ORSAY)
Description
Phosphorus and Boron doped profiles of silcion wafers have been investigated to reconstruct active doping profile from Transmission line measurements. It is known that total doping profiles is accessible through Secondary Ion Mass spectrometry analysis. Here this methods enable us to determine electrical active doping profiles and see the change of this concentration after irradiation . Un-irradiaded and irradiated samples have been analysed and preliminary results will be presented.
Authors
Prof.
ABDENOUR LOUNIS
(LAL ORSAY)
Mrs
Rashid Tasneem
(LAL Orsay)
