Speaker
Marco Bomben
(LPNHE & Université Paris Diderot, Paris (FR))
Description
The advantages TCAD based studies offer during the development of semiconductor sensors are multiple: they are predictive, they provide insight
and they capture and visualise theoretical knowledge.
In this talk I will report on Silvaco TCAD Atlas Device simulator, in particular about the modelisation of the most fundamental semiconductor
physics parameters in that tool, the band gap energy Eg.
The effect of its value on the reverse current and on the diode current scaling with temperature in forward and reverse bias will be discussed,
for boht unirradiated and irradiated bulks.
The goal of the report is to provide a solid basis for discussion on Silvaco TCAD tools and its predictions.
Primary author
Marco Bomben
(LPNHE & Université Paris Diderot, Paris (FR))
