20–22 Nov 2017
CERN
Europe/Zurich timezone

Test beam studies of monolithic HV-CMOS pixel detectors for HL-LHC

22 Nov 2017, 14:20
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
114
Show room on map

Speaker

Stefano Terzo (IFAE Barcelona (ES))

Description

Depleted Monolithic Active Pixel Sensors (DMAPS) built with High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the future pixel detector of the ATLAS Inner Tracker (ITk) at HL-LHC.

The H35Demo is a large area HV-CMOS demonstrator prototype chip developed for the ITk which features a large fill factor layout with 25x250 um^2 pixel cells.
It was designed by KIT, IFAE and University of Liverpool, and produced in AMS 350 nm CMOS technology with different resistivities. The chip consists of four pixel matrices: two matrices including digital electronics in the periphery and thus designed to be operated as monolithic detectors, and two matrices meant to be capacitive coupled to ATLAS FE-I4 chips.

H35Demo chips have been irradiated with reactor neutrons at JSI up to 2e15 n_{eq}/cm^2 and with 23 MeV protons at KIT up to 1e15 n_{eq}/cm^2. The performance in terms of hit efficiency of the monolithic matrices have been investigated in two beam test campaigns, at Fermilab with a 120 GeV proton beam and at CERN SpS with 180 GeV pions. For particle tracking the FE-I4 telescope provided by University of Geneva was used. Results obtained for not irradiated and irradiated chips will be presented.

Authors

Stefano Terzo (IFAE Barcelona (ES)) Sebastian Grinstein (IFAE - Barcelona (ES)) Emanuele Cavallaro (IFAE - Barcelona (ES)) Fabian Alexander Forster (IFAE Barcelona (ES)) Raimon Casanova Mohr (Universitat Autonoma de Barcelona (ES)) Carles PUIGDENGOLES Ivan Peric (KIT - Karlsruhe Institute of Technology (DE)) Eva Vilella Figueras (University of Liverpool (GB))

Presentation materials