Speaker
Description
The impact of the active base with a low electric field on the bulk current in Si detectors irradiated to F ≥ 1x10^15 neq/cm2, i.e. to fluences of interest for the experiments at HL-LHC was studied. The simulated profiles of the electric field E(x) and of the bulk current densities j(x) showed that active base gives different contribution to the detector current operating as electrically neutral conductive base or electrically neutral depleted region, which depends on bias voltage and F. A comparison between the simulated and experimental j vs. F data at fluences upto ~10^17 neq/cm2 showed both j(F) dependences to be converted from linear to the square-root, which leads to saturation of the detector current associated with the impact of several mechanisms.
