17–22 Jun 2018
Europe/Zurich timezone
15th European Vacuum Conference

Thermal expansion coefficient and elastic modulus of reactive pulsed-DC magnetron co sputtered piezoelectric AlScN thin films

22 Jun 2018, 10:10
20m
Room 3 (CICG)

Room 3

CICG

Contributed Electronic Materials & Processing Electronic Materials & Processing

Speaker

Yuan Lu (Fraunhofer IAF)

Description

Al$_{1-x}$Sc$_{x}$N is an attractive material for radio frequency microelectromechanical systems (RF-MEMS) due to higher piezoelectric coefficient d$_{33}$=27.6 pC/N (x=0.43) compared to 6 pC/N in pure AlN [1] and increased electromechanical coupling k$_{t}$$^{2}$ [2]. Mechanical properties such as elastic modulus and coefficient of thermal expansion (CTE) are important for designing RF-MEMS. However, there are very few experimental or theoretical studies of elastic modulus of Al$_{1-x}$Sc$_{x}$N in a large range of compositions (up to x=0.26) [3] and, the CTE of Al$_{1-x}$Sc$_{x}$N thin films has never been reported until now. In this work, reactive pulsed-DC magnetron sputtering process was optimized [4] to produce 1 µm thick highly c-axis oriented Al$_{1-x}$Sc$_{x}$N thin films (up to x=0.32) on 100 mm Si(001) and Al$_{2}$O$_{3}$(0001) substrates. X-ray diffraction, scanning electron microscopy, piezoresponse force microscopy, and Berlincourt method were used to analyze the film properties. To simultaneously determine the thermal expansion coefficients and the elastic modulus, a thermal cycling was performed [5] and the temperature dependent film stress was then measured. Based on the stress measurement results, CTE was calculated as a function of Sc concentration. Our measurements show average CTE αf= 5.01×10$^{-6}$/K, biaxial elastic modulus of 300 GPa, and Young’s modulus of 216 GPa for Al$_{0.7}$Sc=$_{0.3}$N. The average CTE and elastic modulus measured for AlN fits values found in literature [5]. Consequently, the experimentally determined elastic modulus will allow designing RF-MEMS based on Al$_{1-x}$Sc$_{x}$N with various Sc concentrations and the CTE will enable the device performance prediction at elevated temperatures.

[1] M. Akiyama, et al., Adv. Mater. 21(5), 593 (2009)
[2] G. Wingqvist, et al., Appl. Phys. Lett., 97(11), 112902 (2010)
[3] M. A. Caro, et al., J. Phys. Condens. Matter 27, 245901 (2015)
[4] Y. Lu, et al., Phys. Status Solidi A, 1700559 (2017)
[5] R.E. Sah, et al., J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 28, 394 (2010).

Author

Yuan Lu (Fraunhofer IAF)

Co-authors

Mr Markus Reusch (Fraunhofer Institute for Applied Solid State Physics IAF) Mr Nicolas Kurz (IMTEK – Department of Microsystems Engineering, University of Freiburg) Ms Anli Ding (Fraunhofer Institute for Applied Solid State Physics IAF) Mr Tim Christoph (Fraunhofer Institute for Applied Solid State Physics IAF) Dr Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics IAF) Ms Vadim Lebedev (Fraunhofer Institute for Applied Solid State Physics IAF) Agnė Žukauskaitė (Fraunhofer Institute for Applied Solid State Physics IAF)

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