Improved limits on b+EC and ECEC processes in 112Sn

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Aithousa Mitropoulos ()

Aithousa Mitropoulos

Megaron, Athens - Greece

Speaker

Prof. Alexander Barabash (ITEP)

Description

New limits on b+EC and ECEC processes in 112Sn have been obtained using a 380 cm3 HPGe detector and an external source consisting of 100 g enriched tin (94.32% of 112Sn). A limit with 90% C.L. on the 112Sn half-life of 1.3•10^21 y for the ECEC(0v) transition to the 0+3 excited state in 112Te (1871.0 keV) has been established. This transition is discussed in the context of a possible enhancement of the decay rate. The limits on other b+EC and ECEC processes in 112Sn were obtained on the level of (0.1-1.6)•10^21 y at the 90% C.L. In addition, it has been demonstrated that, in the future larger-scale experiments, the sensitivity to the ECEC(0v) processes for 112Sn can reach the order of 10^26 y. Thus there is a chance of detecting the b+EC(2v) transition of 112Sn to the ground state and ECEC(2v) transition to the 0+1 excited state.

Primary author

Co-authors

A Nachab (IN2P3-CNRS et Universite de Bordeaux) Ph Hubert (IN2P3-CNRS et Universite de Bordeaux) V Umatov (ITEP)

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