33rd RD50 Workshop (CERN)

Session

Defects and Material Characterization

26 Nov 2018, 11:00

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

Defects and Material Characterization

• Michael Moll (CERN)

21. Development status of a novel proton irradiation site at the HISKP isochronous cyclotron Bonn

Pascal Wolf (University of Bonn)

26/11/2018, 11:00

The development status of a novel proton irradiation site for silicon detectors is presented. The site is located at the isochronous cyclotron of the HISKP (Helmholtz Institut für Strahlen- und Kernphysik) of the University of Bonn. The cyclotron provides protons with up to 14 MeV kinetic energy with beam currents between a few nA and 1 $\mu$A. Light ions, such as deuterons, $^{3,4}$He or...

5. Measurement of E_eff for Irradiated and Annealed Diodes

Felix Wizemann (Technische Universitaet Dortmund (DE))

26/11/2018, 11:20

The leakage current of silicon sensors and diodes depends on temperature. To compare measurements of devices obtained at different temperatures, it is necessary to understand the dependence of the bulk current on the temperature.
Bulk current measurements are used to obtain $E_{\text{eff}}$ values for proton irradiated n$^+$-in-n diodes up to a fluence of $3 \times 10^{15} \,...

22. Measurements of NitroStrip detectors irradiated with protons and neutrons

Jan Cedric Honig (Albert Ludwigs Universitaet Freiburg (DE))

26/11/2018, 11:40

Nitrogen enrich material showed an improvement of some defects after irradiation. NitroStrip is a RD50 project that aims to compare nitrogen enriched silicon wafers with FZ, DOFZ and MCz material. This presentation will show laser measurements and electrical characterization of NitroStrip samples irradiated at different fluences with protons and neutrons.

3. Sequence Dependent Mixed Irradiations

Jan-Ole Gosewisch (KIT - Karlsruhe Institute of Technology (DE))

26/11/2018, 12:00

This presentation shows CV characteristics and charge collection measurements on strip sensors and diodes after mixed irradiation with 23$\,$MeV protons and 1$\,$MeV neutrons. Samples of different material types were irradiated with neutrons after protons and vice versa with a total fluence of 6e14$\,$n$_{\text{eq}}$/cm$^2$. The depletion voltage is monitored with CV characteristics after the...

26. Characterization of silicon n+-p-p+ detectors with Al2O3 passivating layers grown by Atomic Layer Deposition method

Dr Elena Verbitskaya (Ioffe Institute)

26/11/2018, 12:20

The study focuses on evaluating the characteristics of n+-p-p+ silicon detectors with Al2O3 isolation films processed by Atomic Layer Deposition (ALD) method with a goal of determining the value of the charge density in the alumina layer providing detector stable operation at high voltage. For this, distribution of potentials over the multiple n+ rings implemented in the detector as Voltage...

39. Electrically defects in unirradiated p-type silicon detectors fabricated by different vendors

Cristina Besleaga Stan (National Institute of Materials Physics )

26/11/2018, 13:40

TBA

40. Defect investigations in 1 MeV neutron irradiated PiN pads and LGADs

Cristina Besleaga Stan (National Institute of Materials Physics)

26/11/2018, 14:00

TBA

30. Acceptor removal project in the framework of RD50 collaboration and last TSC results on p-type Si pad diodes

Yana Gurimskaya (CERN)

26/11/2018, 14:20

In present work a new common acceptor removal project in the framework of RD50 collaboration, role of each participant, type of measurement and samples distribution will be outlined.
The proton- and neutron-fluence dependent radiation damage effects, including change in leakage current, effective doping concentration, Neff, space charge sign inversion, but also introduction and annealing...

29. Status of TSC measurements at Hamburg - I. Nitrogen enriched versus standard FZ material, II. Acceptor removal after irradiation with 5.5 MeV electrons

Eckhart Fretwurst (Hamburg University (DE))

26/11/2018, 14:40

Microscopic studies using the Thermally Stimulated Current (TSC) method have been performed on nitrogen enriched and standard n-type FZ samples. The devices were irradiated with 23 GeV protons at the CERN PS and with reactor neutrons at Ljubljana. For the trap filling during the TSC measurement cycles either a forward current of 1 mA was applied or light of 520 nm wave length was injected into...

15. Comparative analysis of proton and ion damages in Si detectors supplemented with SRIM simulations

Daria Mitina (Ioffe Institute)

26/11/2018, 15:00

In the study impact of ⁴⁰Ar ion irradiation was compared with proton irradiation for scaling the silicon detectors degradation characteristics and evaluating the influence of the vacancy generation rate on the degradation. The ⁴⁰Ar ions with the total energy of 1.62 GeV were chosen since they provide uniform defect generation like 23 GeV protons. The values of the current...

19. Experimental Determination of Proton Hardness Factors at Various Irradiation Facilities.

Cameron James Simpson-Allsop (University of Birmingham (GB))

26/11/2018, 15:20

The scheduled upgrade of the LHC to the HL-LHC presents new challenges in radiation damage studies. Around the world, campaigns to measure radiation hardness of detector sensors and components are being undertaken. Upon analysis of the I–V and C–V characteristics of BPW34F photodiodes, the hardness factors for proton beams at three different facilities have been measured. By computing the...

31. NIEL study of high energy heavy ions in silicon

Isidre Mateu (CERN)

26/11/2018, 16:10

Following the end of the 2017 and 2018 proton irradiation campaigns, high energy Xenon (2017) and Lead (2018) ions were delivered to the IRRAD facility at CERN. While the purpose of the heavy ion beams was mainly to test electronic components for Space in the CHARM facility downstream of IRRAD, dedicated experiments were also performed in which pad diodes were irradiated at different fluences...

34. Discussion

Michael Moll (CERN)

26/11/2018, 16:30