33rd RD50 Workshop (CERN)

Session

Characterization Techniques

27 Nov 2018, 15:50

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

Characterization Techniques

• Gregor Kramberger (Jozef Stefan Institute (SI))

17. Novel view on extraction of charge carrier transport parameters from classical TCT

Artem Shepelev (Ioffe Institute)

27/11/2018, 15:50

The main experimental instrument for study of the field distribution in irradiated silicon detectors is a transient current technique (TCT). It is shown in this study that even in the case of significant contribution of carrier trapping to the shape of current response, the raw data of regular TCT (shape of current response in pad detector) allow to derive the electric field distribution with...

24. Characterization of semiconductor detectors using IBIC imaging method

Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR))

27/11/2018, 16:10

The Ion Beam Induced Current (IBIC) technique available at the Accelerator laboratory of the Ruder Boskovic Institute is using scanning microbeam to study the properties of various semiconductor devices. The characteristics of the IBIC provide us with information of the response of the material and the coordinate of the beam impact point. The focused IBIC technique allows us to map 2D...

38. Discussion

Gregor Kramberger (Jozef Stefan Institute (SI))

27/11/2018, 16:30