Development and applications of fast-timing semiconductor devices for US-Japan collaboration

Name: Development and applications of fast-timing semiconductor devices for US-Japan collaboration
Start: 2019-02-21T09:00:00-06:00
End: 2019-02-22T17:00:00-06:00
Location: Fermilab

21–22 Feb 2019

Fermilab

US/Central timezone

Overview
Timetable
Contribution List

Contact

Koji.Nakamura@cern.ch

SOI CMOS development in Japan

22 Feb 2019, 10:00

FTBF (Fermilab)

FTBF

Fermilab

Other Experiment for FTBF testbeam

Kazuhiko Hara (University of Tsukuba (JP))Dr Miho Yamada (KEK) Murayama Hitoshi (Tsukuba) Shikie Iwanami (Tsukuba)Mr Shun Ono (KEK)

US-Japan2019-hara.pdf

US-Japan2019-hara.pptx

Development and applications of fast-timing semiconductor devices for US-Japan collaboration

Contact

SOI CMOS development in Japan

FTBF

Fermilab

Speakers

Presentation materials

Choose timezone

Development and applications of fast-timing semiconductor devices for US-Japan collaboration

Contact

Speakers

Presentation materials