Speaker
Description
In this work the Thermally Stimulated Current (TSC) technique has been used to investigate the properties of the radiation induced BiOi defect complex by 23 GeV protons, including activation energy, capture cross section, defect concentration as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0 to 180 minutes) followed by isochronal annealing (for 15 minutes between 100 °C and 180 °C in steps of 10 °C ) studies had been performed in order to get information about the thermal stability of the BiOi defect in 50 Ω cm material after irradiation with 23 GeV protons to a fluence of 6.91×1013 p/cm². The results will be presented and discussed. Furthermore, the extracted data from TSC measurements are compared with the macroscopic properties derived from current-voltage (I-V) and capacitance-voltage (C-V) characteristics. In addition the introduction rate of BiOi as function of the initial doping concentration was determined by exposing diodes with different resistivity (10 Ωcm, 50 Ωcm, 250 Ωcm, and 2 kΩcm) to 23 GeV protons. These results will be compared with data from DLTS measurements achieved by the team of the RD50 “Acceptor removal project”.
