18–20 Nov 2020
Europe/Zagreb timezone

An increase of the quantum yield in highly irradiated Si.

18 Nov 2020, 10:20
20m

Speaker

Juozas Vaitkus (Vilnius University )

Description

The measurement of spectral dependence of photoconductivity permits to investigate the deep level spectrum, recombination at the surface and photoelectric quantum yield.
This presentation deals with observation of an increase of quantum yield at lover photon energy in highly irradiated Si in comparison with less or non-irradiated Si. The effect was observed in neutron irradiated Si to the fluence 1e16 cm-2 and higher. It is attributed to the impact ionization via deep levels.

Author

Juozas Vaitkus (Vilnius University )

Co-authors

Mr Vilius Vertelis (Vilnius University) Prof. Vaidotas Kazukauskas (Vilnius University) Juozas Vysniauskas (Vilnius University)

Presentation materials