Conveners
Defect Characterization: Defect Characterization
- Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR))
- Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
HRTEM, LA-ICP-MS and DLTS techniques were employed to characterize several types of B-doped silicon diodes after irradiation with hadrons. The HRTEM results on LGAD samples irradiated with 1019cm-2 show that there is a preferential grouping of defects along tracks normal to the film surface. We will present the LA-ICP-MS technique, recently installed in NIMP, with which we could estimate the...
In this work the Thermally Stimulated Current (TSC) technique has been used to investigate the properties of the radiation induced BiOi defect complex by 23 GeV protons, including activation energy, capture cross section, defect concentration as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0 to 180 minutes) followed by isochronal annealing (for 15 minutes between...
The measurement of spectral dependence of photoconductivity permits to investigate the deep level spectrum, recombination at the surface and photoelectric quantum yield.
This presentation deals with observation of an increase of quantum yield at lover photon energy in highly irradiated Si in comparison with less or non-irradiated Si. The effect was observed in neutron irradiated Si to the...
The time stability of a single crystal diamond radiation detector in response to alpha particle irradiation is studied in this work. A diamond detector is fabricated from a free-standing single crystal diamond plate and is packaged for the alpha irradiation studies. The detector under the bias voltage of +70 V is kept under constant alpha irradiation from a mixed α-source having major activity...
Owing to their low dark current, high transparency, high thermal conductivity and potential radiation hardness, there is a special interest in silicon carbide devices for radiation monitoring in radiation harsh environments or operation at elevated temperatures.
In this work, segmented four-quadrant pn junction diodes produced on epitaxied 4H-SiC substrates are studied. The impact of 2-MeV...
