3-5 June 2020
Europe/Zurich timezone

Radiation tolerant small-pixel passive CMOS sensors with RD53A readout

5 Jun 2020, 13:00


Yannick Manuel Dieter (University of Bonn (DE))


With the HL-LHC upgrade of the ATLAS detector, the surface of the ATLAS pixel detector will increase from 2 m² to approximately 13 m² . Therefore, commercial CMOS processing lines offering high production throughput at comparatively low costs represent an attractive option for such large-area detectors. Further benefits originate from multiple metal layers, metal–insulator–metal capacitors, and polysilicon layers which can be used to enhance the sensor design.

Thinned, small-pixel passive CMOS sensors in 150 nm technology offered by LFoundry were manufactured and assembled into hybrid pixel modules using the RD53A readout chip.

The sensors were characterized, before and after irradiation to a fluence of $5\times10^{15}$ $\mathrm{n_{eq}}$/cm², in the laboratory and also using a minimum ionising electron beam. Their performance in terms of noise and hit-detection efficiency equals that of conventional planar pixel sensors. In particular, a hit-detection efficiency of 99 % is measured after irradiation to $5\times10^{15}$ $\mathrm{n_{eq}}$/cm².

Primary author

Yannick Manuel Dieter (University of Bonn (DE))


David-Leon Pohl (University of Bonn (DE)) Fabian Huegging (University of Bonn (DE)) Hans Krueger (University of Bonn) Jens Janssen (University of Bonn (DE)) Jochen Christian Dingfelder (University of Bonn (DE)) Michael Daas (University of Bonn (DE)) Norbert Wermes (University of Bonn (DE)) Tianyang Wang (University of Bonn (DE)) Tomasz Hemperek (University of Bonn (DE))

Presentation materials