Speaker
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
Description
We will report on the electrically active defects induced by hadron irradiation in p-type diodes processed on different materials (EPI and CZ) and of different resistivities. The generation of the defects and their electrical parameters (activation energy and capture cross sections) have been investigated by DLTS technique, in the framework of the RD50- Acceptor removal project. The defects' generation rate in different materials after irradiation (with 1MeV neutrons or 23 GeV protons) will be discussed in connection with the Boron content in the samples.
Author
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
Co-authors
Cristina Besleaga Stan
(National Institute of Materials Physics)
Andrei Nitescu
(National Institute of Materials Physics)
Lucian Filip
(National Institute of Materials Physics)
Dan Simion
(National Institute of Materials Physics)
Andrei Kuncser
(National Institute of Materials Physics)
Michael Moll
(CERN)
Yana Gurimskaya
(CERN)
Eckhart Fretwurst
(Hamburg University (DE))
Joern Schwandt
(Hamburg University (DE))
Leonid Makarenko
(Belarus University)
