Using electrical characterization, acceptor removal coefficients are estimated and compared for Boron, Gallium and Boron with Carbon diffused gain layer LGADs. Effective implant is computed as a function of fluence for up to 6e15 neutron and proton irradiated sensors in different processes. Results are compared to gain reduction calculations aand relent coefficients are derived. The two separate approaches are compared with laboratory charged collection measurements obtained, while a breakdown voltage model is also considered. A direction for further improvement on radiation hardness is presented for discussion.